LexDanaLexDanabeta
Inventor

Yoshihiro Kubota

Inventor
Gunma, JP

Overview

124→
Patents
1983–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 124 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices8%
H10DInorganic electric semiconductor devices8%
Y10TTechnical subjects covered by former us classification6%
H01LSemiconductor devices4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
C30BSingle-crystal growth3%
C23CCoating metallic material3%
PatentTitleYear
11,088,383Fuel cell vehicle202111,072,249Fuel cell vehicle202111,069,560Method of transferring device layer to transfer substrate and highly thermal conductive substrate202111,065,606Metal-substituted beta zeolite and method for producing same202110,910,576Light-emitting element, display device, electronic device, and lighting device202110,829,868Manufacturing method of SiC composite substrate202010,781,104Composite substrate, method for forming nanocarbon film, and nanocarbon film202010,711,373SiC composite substrate and method for manufacturing same202010,612,157Method for manufacturing SiC composite substrate, and method for manufacturing semiconductor substrate202010,553,518Heat dissipation substrate and method for producing same202010,431,460Method for producing SiC composite substrate20199,895,683'Zeolite, manufacturing method of the same, and catalytic cracking catalyst of paraffin'20189,837,301Method for producing hybrid substrates, and hybrid substrate20179,748,032'Inductor array chip and DC-DC converter'20179,741,603'Method for producing hybrid substrate, and hybrid substrate'20179,646,873'Method for producing SOS substrates, and SOS substrate'20179,512,953'Thermal insulation laminate'20169,425,248'Composite substrate'20169,379,000'Method for producing nanocarbon film and nanocarbon film'20169,238,219'Zeolite, manufacturing method of the same, and catalytic cracking batalyst of paraffin'20169,064,929'Method for reducing the thickness of an SOI layer'20158,829,397'Corrosion-resistant multilayer ceramic member'20148,772,132'Method of manufacturing laminated wafer by high temperature laminating method'20148,765,576'Process for producing laminated substrate and laminated substrate'20148,703,580'Silicon on insulator (SOI) wafer and process for producing same'20148,614,505'Semiconductor device with heat spreader'20138,614,119'Semiconductor device with heat spreader'20138,564,108'Semiconductor device with heat spreader'20138,551,862'Method of manufacturing laminated wafer by high temperature laminating method'20138,518,612'Pellicle for lithography and manufacturing method thereof'20138,420,503'Method for producing SOI substrate'20138,357,586'Method for manufacturing SOI wafer'20138,314,006'Method for manufacturing bonded wafer'20128,278,743'Semiconductor device with heat spreader'20128,268,700'Method for manufacturing SOI wafer'20128,263,478'Method for manufacturing semiconductor substrate'20128,236,667'Silicon on insulator (SOI) wafer and process for producing same'20128,227,290'Method for producing single crystal silicon solar cell and single crystal silicon solar cell'20128,227,289'Method for producing single crystal silicon solar cell and single crystal silicon solar cell'2012D0662195'Water heater'20128,138,064'Method for producing silicon film-transferred insulator wafer'20128,129,612'Method for manufacturing single-crystal silicon solar cell and single-crystal silicon solar cell'20128,119,903'Method of manufacturing single crystal silicon solar cell and single crystal silicon solar cell'20128,115,141'Heating element'2012D0653320'Water heater for space heating'2012D0653321'Water heater'20128,106,290'Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell'20128,088,670'Method for manufacturing bonded substrate with sandblast treatment'20128,030,118'Method for producing single crystal silicon solar cell and single crystal silicon solar cell'20118,030,176'Method for preparing substrate having monocrystalline film'20118,021,910'Method for producing single crystal silicon solar cell and single crystal silicon solar cell'20117,977,209'Method for manufacturing SOI substrate'20117,972,937'Method for producing semiconductor substrate'20117,952,054'Heating element'20117,951,513'Pellicle and method for producing pellicle'20117,935,611'Method for manufacturing substrate for photoelectric conversion element'20117,923,835'Package, electronic device, substrate having a separation region and a wiring layers, and method for manufacturing'20117,919,217'Pellicle and method for producing pellicle'20117,901,846'Pellicle and method for manufacturing the same'20117,892,934'SOI substrate and method for manufacturing SOI substrate'20117,879,175'Method for manufacturing pyrolytic boron nitride composite substrate'20117,855,127'Method for manufacturing semiconductor substrate'20107,833,878'Method for manufacturing SOI substrate'20107,790,571'SOQ substrate and method of manufacturing SOQ substrate'20107,749,870'Method for producing SOI substrate'20107,732,867'Method for manufacturing SOQ substrate'20107,696,059'Method for manufacturing semiconductor substrate'20107,691,724'Method for manufacturing SOI substrate'20107,693,507'Wireless network control device and wireless network control system'20107,615,456'Method for manufacturing SOI substrate'20097,476,811'Semiconductor device and manufacturing method therefor'20097,361,980'Semiconductor device'20087,122,938'Surface acoustic wave device'20067,119,042'Catalyst composition for the isomerization of n-paraffin and a process for isomerizing n-paraffin'20067,070,650'Diamond film and method for producing the same'20067,042,102'Semiconductor device'20066,696,754'Semiconductor module including a plurality of semiconductor devices detachably'20046,560,219'Hybrid exchange, an exchange, and a re-arrangement method for STM data in an exchange'20036,509,124'Method of producing diamond film for lithography'20036,472,744'Semiconductor module including a plurality of semiconductor devices detachably'20026,471,940'Preparation of zeolite'20026,465,049'Method for preparation of diamond film'20026,376,977'Silicon electrode plate'20026,333,564'Surface mount type semiconductor device and method of producing the same having an interposing layer electrically connecting the semiconductor chip with protrusion electrodes'20016,288,444'Semiconductor device and method of producing the same'20016,122,159'Electrostatic holding apparatus'20005,965,294'Hydrogen absorbing alloy electrode'19995,834,143'Frame-supported dustproof pellicle for photolithographic photomask'19985,804,468'Process for manufacturing a packaged semiconductor having a divided leadframe stage'19985,693,382'Frame-supported pellicle for dustproof protection of photomask in photolithography'19975,691,088'Pellicle for protection of photolithographic mask'19975,643,483'Ceramic heater made of fused silica glass having roughened surface'19975,616,927'Frame-supported pellicle for dustproof protection of photomask'19975,607,541'Electrostatic chuck'19975,597,669'Frame-supported pellicle for photolithography'19975,576,417'Method for synthesizing aromatic polymers'19965,574,904'Database management system in an intelligent network using a common request data format'19965,497,032'Semiconductor device and lead frame therefore'19965,470,621'Frame-supported pellicle for dustproof protection of photomask'19955,419,972'Frame-supported pellicle for dustproof protection of photomask'19955,382,469'Ceramic-titanium nitride electrostatic chuck'19955,378,514'Frame-supported pellicle for photolithography'19955,370,951'Frame-supported pellicle for protection of photolithographic mask'19945,368,675'Method for the preparation of a frame-supported pellicle for photolithography'19945,350,720'Triple-layered ceramic heater'19945,327,808'Method for the preparation of a frame-supported pellicle for photolithography'19945,324,053'Electrostatic chuck'19945,308,567'Method for the preparation of a resin membrane'19945,300,348'Frame-supported pellicle for photolithography, comprising a fluorocarbon containing organopolysiloxane based adhesive'19945,286,567'Pellicle for photolithographic mask'19945,254,419'Method for dust-proofing in the manufacture of electronic devices and pellicle therefor'19935,246,802'X-ray permeable membrane for X-ray lithographic mask'19935,234,742'Pellicle for lithography'19935,221,355'Silicon carbide film forming apparatus'19935,209,996'Membrane consisting of silicon carbide and silicon nitride, method for the preparation thereof and mask for X-ray lithography utilizing the same'19935,199,055'X-ray lithographic mask blank with reinforcement'19935,169,440'Silicon carbide membrane for X-ray lithography and method for the preparation thereof'19925,118,573'Magneto-optical recording medium'19925,098,515'Method for the preparation of a silicon carbide-silicon nitride composite membrane for X-ray lithography'19925,089,085'Silicon carbide membrane for X-ray lithography and method for the prepartion thereof'19924,929,572'Dopant of arsenic, method for the preparation thereof and method for doping of semiconductor therewith'19904,775,565'Vessel for refractory use having multi-layered wall'19884,734,386'Boron nitride dopant source for diffusion doping'19884,395,512'Polyphenylenesulfide resin composition'1983

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1983–2021Patents assigned to SHINETSU CHEMICAL CO (94)· patent assignee history
1988–2021Based in Gunma, JP· patent location history
1996–2011Based in Kawasaki, JP· patent location history
1997–2020Based in Annaka, JP· patent location history
2006–2014Based in Tokyo, JP· patent location history
2012–2015Patents assigned to KUBOTA YOSHIHIRO (27)· patent assignee history
2012–2015Patents assigned to ITO ATSUO (17)· patent assignee history
2012–2015Patents assigned to AKIYAMA SHOJI (16)· patent assignee history
2012–2015Patents assigned to KAWAI MAKOTO (15)· patent assignee history
2012–2018Based in Yokohama, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHINETSU CHEMICAL CO941983–2021
KUBOTA YOSHIHIROself272012–2015
ITO ATSUO172012–2015
AKIYAMA SHOJI162012–2015
KAWAI MAKOTO152012–2015
Locations
LocationPatentsSpan
Gunma, JP661988–2021
Annaka, JP191997–2020
Kawasaki, JP121996–2011
Yokohama, JP62012–2018
Tokyo, JP42006–2014