Inventor

Tomoyuki Sasaki

Inventor

Tokyo, JP

Overview

2010–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 15 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary

G11CStatic stores17%

H01LSemiconductor devices17%

H10NElectric solid-state devices not otherwise provided for17%

H10BElectronic memory devices12%

G01RMeasuring electric variables8%

H01FMagnets8%

H10DInorganic electric semiconductor devices5%

H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner4%

G06FElectric digital data processing2%

G11BInformation storage based on relative movement between record carrier and transducer2%

PatentTitleYear

10,971,293Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and spin-orbit-torque magnetization rotational element manufacturing method2021 10,964,885Magnetoresistive effect element, magnetic memory, magnetization rotation method, and spin current magnetization rotational element2021 10,943,631Spin current magnetization reversing element, magnetoresistance effect element, magnetic memory, and magnetic device2021 10,944,045Magnetic memory2021 10,937,480Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory2021 10,923,649Spin current magnetization rotation magnetoresistance effect element, and magnetic memory2021 10,916,480Magnetic wall utilization type analog memory device, magnetic wall utilization type analog memory, nonvolatile logic circuit, and magnetic neuro device2021 10,916,283Magnetic domain wall movement element and magnetic recording array2021 10,908,234Magnetoresistance effect element, magnetic sensor and magnetic memory2021 10,910,554Spin-current magnetization rotational element and spin orbit torque type magnetoresistance effect element2021 10,902,987Spin-orbit torque type magnetization rotation element, spin-orbit torque magnetoresistance effect element, and method of manufacturing spin-orbit torque type magnetization rotation element2021 10,892,009Magnetic wall utilization-analog memory element and magnetic wall utilization analog memory2021 10,892,401Spin current magnetization rotational element, magnetoresistance effect element and magnetic memory2021 10,884,078Ferromagnetic multilayer film, magnetoresistance effect element, and method for manufacturing ferromagnetic multilayer film2021 7,811,664'Fluororesin coating film'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010Patents assigned to DU PONT (1)· patent assignee history

2010Patents assigned to MITSUI DU PONT FLUORCHEMICAL (1)· patent assignee history

2010Based in Shizuoka, JP· patent location history

2021Patents assigned to TDK CORP (14)· patent assignee history

2021Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TDK CORP	14	2021
DU PONT	1	2010
MITSUI DU PONT FLUORCHEMICAL	1	2010

Locations

Location	Patents	Span
Tokyo, JP	14	2021
Shizuoka, JP	1	2010