Inventor
Nathaniel Quitoriano
Inventor
Pacifica, CA, US
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G02Bprimary
G02BOptical elements, systems or apparatus13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation10%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
B82YSpecific uses or applications of nanostructures6%
H01LSemiconductor devices6%
H10NElectric solid-state devices not otherwise provided for6%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution6%
H10BElectronic memory devices5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
PatentTitleYear
10,658,539Light emitting diode device20209,829,629Methods and systems relating to optical waveguide tapers20179,484,197'Lateral growth semiconductor method and devices'20169,261,632'Light emitting diode device'20169,008,467'Nanoparticle-based quantum confined stark effect modulator'20158,878,342'Using alloy electrodes to dope memristors'20148,766,092'Energy collection systems and methods'20148,768,132'Ridge waveguide'20148,569,900'Nanowire sensor with angled segments that are differently functionalized'20138,547,727'Memristive device'20138,471,234'Multilayer memristive devices'20138,455,852'Controlled placement of dopants in memristor active regions'20138,389,388'Photonic device and method of making the same'20138,244,134'Optical interconnect'20128,198,706'Multi-level nanowire structure and method of making the same'20128,129,710'Plasmon enhanced nanowire light emitting diode'20128,101,473'Rounded three-dimensional germanium active channel for transistors and sensors'20128,043,687'Structure including a graphene layer and method for forming the same'20118,030,729'Device for absorbing or emitting light and methods of making the same'20117,964,927'Semiconductor device and method for strain controlled optical absorption'20117,781,853'Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same'20107,548,671'Optical device including waveguide grating structure'20097,474,811'Nanowire photonic apparatus employing optical field confinement'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2015Patents assigned to HEWLETT PACKARD DEVELOPMENT CO (17)· patent assignee history
2009–2016Based in Pacifica, CA, US· patent location history
2012–2016Patents assigned to QUITORIANO NATHANIEL (8)· patent assignee history
2012–2013Patents assigned to KAMINS THEODORE I (4)· patent assignee history
2012Based in Palo Alto, CA, US· patent location history
2013–2014Patents assigned to QUITORIANO NATHANIEL J (7)· patent assignee history
2013Patents assigned to CHO HANS S (3)· patent assignee history
2016–2020Based in Montreal, CA· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HEWLETT PACKARD DEVELOPMENT CO | 17 | 2009–2015 |
| QUITORIANO NATHANIELself | 8 | 2012–2016 |
| QUITORIANO NATHANIEL Jself | 7 | 2013–2014 |
| KAMINS THEODORE I | 4 | 2012–2013 |
| CHO HANS S | 3 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Pacifica, California, US | 19 | 2009–2016 |
| Montreal, CA | 3 | 2016–2020 |
| Palo Alto, California, US | 1 | 2012 |