LexDanaLexDanabeta
Inventor

Makoto Iwai

Inventor
Kasugai, JP

Overview

82→
Patents
1997–2021
Patent span
Chemistry
Primary field (CPC C)

Patents· 82 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth21%
G11CStatic stores15%
H01LSemiconductor devices8%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
Y10TTechnical subjects covered by former us classification7%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium5%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
H10DInorganic electric semiconductor devices3%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds2%
PatentTitleYear
11,114,595Optical component and transparent body202111,087,845Nonvolatile semiconductor memory including a read operation202110,785,014Computation device, control device and control method202010,658,039Nonvolatile semiconductor memory including a read operation202010,621,373Data security management based on device locations and connection states202010,604,658Organic silicon compound, surface treatment agent containing same, resin composition containing same, and gel or cured product of same202010,347,755Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrate201910,170,202Memory system201910,109,359Nonvolatile semiconductor memory including a read operation201810,041,186Method for producing nitride crystal201810,032,958Seed crystal substrates, composite substrates and functional devices201810,000,864Group 13 element nitride crystal layer and function element20189,960,316Method for separating group 13 element nitride layer, and composite substrate20189,941,442Group 13 element nitride crystal substrate and function element20189,882,042'Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrate'20189,677,192'Group 3B nitride crystal substrate'20179,653,649'Gallium nitride substrates and functional devices'20179,514,836'Nonvolatile semiconductor memory and verify read operation'20169,384,848'Nonvolatile semiconductor memory with dual latch sense amplifier'20169,287,453'Composite substrates and functional device'20169,231,155'Composite substrates, a method of producing the same, a method of producing functional layers made of nitrides of group 13 elements, and functional devices'20169,090,988'Method of producing crystals of nitrides of group 13 elements and melt compositions'20159,065,012'Composite substrates and functional devices'20159,045,844'Method for peeling group 13 element nitride film'20159,041,004'Films of nitrides of group 13 elements and layered body including the same'20159,030,880'Nonvolatile semiconductor storage device'20159,017,479'Nitride single crystal manufacturing apparatus'20158,999,059'Process for producing a nitride single crystal and apparatus therefor'20158,848,446'Nonvolatile semiconductor memory device'20148,750,039'Nonvolatile semiconductor memory'20148,657,955'Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal'20148,642,690'Bis [tri (hydroxypolyalkyleneoxy) silylalkyl] polysulfide, method of manufacturing bis [tri (hydroxypolyalkyleneoxy) silylalkyl] polysulfide, tire rubber additive, and tire rubber composition'20148,568,532'Method for growing single crystal of group III metal nitride and reaction vessel for use in same'20138,559,222'Nonvolatile semiconductor memory'20138,507,364'N-type group III nitride-based compound semiconductor and production method therefor'20138,506,705'Method for manufacturing nitride single crystal'20138,501,141'Method for producing group III nitride semiconductor'20138,486,190'Process for producing single crystal'20138,477,534'Nonvolatile semiconductor memory'20138,361,222'Method for producing group III nitride-based compound semiconductor'20138,284,605'Semiconductor storage device and reading method thereof'20128,243,517'Nonvolatile semiconductor memory, method for reading out thereof, and memory card'20128,241,422'Gallium nitride single crystal growing method and gallium nitride single crystal'20128,231,729'Apparatus for producing nitride single crystal'20128,227,324'Method for producing group III nitride-based compound semiconductor crystal'20128,223,543'Nonvolatile semiconductor memory'20128,216,365'Method for producing a semiconductor crystal'20128,213,232'Nonvolatile semiconductor memory, method for reading out thereof, and memory card'20128,203,888'Non-volatile semiconductor storage device'20128,123,856'Method and apparatus for producing group III nitride based compound semiconductor'20128,093,323'Method for manufacturing a bis(silatranylalkyl) polysulfide, method for manufacturing a mixture of bis(silatranylalkyl) polysulfide etc., a mixture of bis(silatranylalkyl) polysulfide etc., and rubber composition'20128,084,281'Semiconductor substrate, electronic device, optical device, and production methods therefor'20118,039,561'Method for the preparation of a silicon-containing polysulfide-type polymer'20118,036,038'Semiconductor memory device'20118,009,470'Nonvolatile semiconductor memory'20117,995,389'Multi-level nonvolatile semiconductor memory'20117,923,572'Method for producing ketimine structure-containing alkoxysilane'20117,903,469'Nonvolatile semiconductor memory, its read method and a memory card'20117,859,901'Semiconductor memory device'20107,842,133'Single crystal growing method'20107,838,671'Nitrogen-containing organosilicon compound method of manufacture, and method of treating surfaces'20107,833,347'Process and apparatus for producing nitride single crystal'20107,815,733'Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal'20107,710,779'Nonvolatile semiconductor memory, method for reading out thereof, and memory card'20107,708,833'Crystal growing apparatus'20107,659,419'Stabilizing agent for hydroalkoxysilane, stabilization method, and stabilized hydroalkoxysilane'20107,616,502'Nonvolatile semiconductor memory'20097,529,131'Nonvolatile semiconductor memory, method for reading out thereof, and memory card'20097,517,557'Oxide films, a method of producing the same and structures having the same'20097,508,712'Nonvolatile semiconductor memory device and control method thereof'20097,459,023'Method for producing semiconductor crystal'20087,453,625'Method of producing domain inversion parts and optical devices'20087,449,064'Method for producing AlN single crystal and AlN single crystal'20087,446,137'Thermosetting resin and thiocyanato-containing organohydrocarbonoxysilane'20087,326,800'Nitrogen-containing organosilicon compound, method of manufacture, and method of treating surfaces'20087,164,525'Wavelength converting devices'20076,807,210'Systems and a method for generating blue laser beam'20046,687,448'Method of processing a substrate made of a ferroelectric single crystalline material'20046,513,226'Method of manufacturing film structure, method of manufacturing optical waveguide substrate and method of manufacturing second harmonic generation device'20036,509,430'Coating agent composition and composite film'20036,181,462'Second harmonic wave-generation device'20015,698,725'Surface treating agent for glass fiber substrates'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2020Based in Chiba, JP· patent location history
2001–2021Patents assigned to NGK INSULATORS LTD (43)· patent assignee history
2001–2021Based in Kasugai, JP· patent location history
2008–2015Patents assigned to TOYODA GOSEI KK (13)· patent assignee history
2009–2016Patents assigned to TOSHIBA KK (21)· patent assignee history
2009–2020Based in Yokohama, JP· patent location history
2009–2020Based in Kanagawa, JP· patent location history
2010–2013Based in Nagoya, JP· patent location history
2011–2017Patents assigned to IWAI MAKOTO (25)· patent assignee history
2011–2015Patents assigned to MORI YUSUKE (14)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NGK INSULATORS LTD432001–2021
IWAI MAKOTOself252011–2017
TOSHIBA KK212009–2016
MORI YUSUKE142011–2015
TOYODA GOSEI KK132008–2015
Locations
LocationPatentsSpan
Kasugai, JP372001–2021
Yokohama, JP182009–2020
Chiba, JP71997–2020
Nagoya, JP52010–2013
Kanagawa, JP42009–2020