Inventor
Haruhiko Ono
Inventor
Tokyo, JP
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices42%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H10BElectronic memory devices17%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests17%
PatentTitleYear
7,495,264'Semiconductor device with high dielectric constant insulating film and manufacturing method for the same'20097,164,169'Semiconductor device having high-permittivity insulation film and production method therefor'20076,521,930'Semiconductor device having Ta2O5 thin film'20036,459,126'Semiconductor device including a MIS transistor'20025,972,750'Nonvolatile semiconductor memory device and manufacturing method of the same'19995,973,355'Nonvolatile semiconductor memory device and manufacturing method of the same'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2009Patents assigned to NEC CORP (6)· patent assignee history
1999–2009Based in Tokyo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 6 | 1999–2009 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 6 | 1999–2009 |