Inventor
Rongjun Wang
Inventor
Dublin, CA, US
Overview
Patents· 44 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material19%
H01JElectric discharge tubes or discharge lamps16%
H01LSemiconductor devices12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10DInorganic electric semiconductor devices7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
H10NElectric solid-state devices not otherwise provided for4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
PatentTitleYear
10,763,090High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this process202010,744,558Magnesium alloy cast-rolling unit202010,718,049Process kit shield for improved particle reduction202010,704,139Plasma chamber target for reducing defects in workpiece during dielectric sputtering202010,665,426Methods for thin film material deposition using reactive plasma-free physical vapor deposition202010,636,964Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy202010,622,011Magnetic tunnel junctions suitable for high temperature thermal processing202010,546,973Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices202010,468,592Magnetic tunnel junctions and methods of fabrication thereof201910,449,602Magnesium alloy cast-rolling unit201910,431,440Methods and apparatus for processing a substrate201910,255,935Magnetic tunnel junctions suitable for high temperature thermal processing201910,236,412Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices201910,193,014Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices201910,109,481Aluminum-nitride buffer and active layers by physical vapor deposition201810,096,455Extended dark space shield201810,096,725Method for graded anti-reflective coatings by physical vapor deposition201810,060,024Sputtering target for PVD chamber20189,929,310'Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices'20189,834,840Process kit shield for improved particle reduction20179,752,228'Sputtering target for PVD chamber'20179,689,070'Deposition ring and electrostatic chuck for physical vapor deposition chamber'20179,633,839'Methods for depositing dielectric films via physical vapor deposition processes'20179,396,933'PVD buffer layers for LED fabrication'20169,281,167'Variable radius dual magnetron'20169,087,679'Uniformity tuning capable ESC grounding kit for RF PVD chamber'20159,017,533'Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning'20158,992,741'Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target'20158,968,537'PVD sputtering target with a protected backing plate'20158,920,611'Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning'20148,911,601'Deposition ring and electrostatic chuck for physical vapor deposition chamber'20148,580,094'Magnetron design for RF/DC physical vapor deposition'20138,557,094'Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum'20138,435,392'Encapsulated sputtering target'20138,133,368'Encapsulated sputtering target'20128,129,280'Substrate device having a tuned work function and methods of forming thereof'20128,119,525'Process for selective growth of films during ECP plating'20127,737,028'Selective ruthenium deposition on copper materials'20107,691,742'Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA'20107,659,204'Oxidized barrier layer'20107,595,263'Atomic layer deposition of barrier materials'20097,524,762'Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA'20097,241,686'Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA'20077,211,508'Atomic layer deposition of tantalum based barrier materials'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2020Patents assigned to APPLIED MATERIALS INC (42)· patent assignee history
2007–2010Based in Sunnyvale, CA, US· patent location history
2010–2015Based in Cupertino, CA, US· patent location history
2012–2017Patents assigned to WANG RONGJUN (15)· patent assignee history
2012–2017Patents assigned to TANG XIANMIN (10)· patent assignee history
2012–2017Patents assigned to LIU ZHENDONG (4)· patent assignee history
2012–2020Based in Dublin, CA, US· patent location history
2013–2017Patents assigned to GUNG TZA-JING (4)· patent assignee history
2019–2020Based in Taiyuan, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 42 | 2007–2020 |
| WANG RONGJUNself | 15 | 2012–2017 |
| TANG XIANMIN | 10 | 2012–2017 |
| GUNG TZA-JING | 4 | 2013–2017 |
| LIU ZHENDONG | 4 | 2012–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Dublin, California, US | 30 | 2012–2020 |
| Cupertino, California, US | 7 | 2010–2015 |
| Sunnyvale, California, US | 5 | 2007–2010 |
| Taiyuan, CN | 2 | 2019–2020 |