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Inventor

Sei Fukushima

Inventor
Kanagawa, JP

Overview

3→
Patents
2009–2012
Patent span
Chemistry
Primary field (CPC C)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
Y10TTechnical subjects covered by former us classification25%
C01BNon-metallic elements13%
H01JElectric discharge tubes or discharge lamps13%
PatentTitleYear
8,197,594'Silicon wafer for semiconductor and manufacturing method thereof'20128,142,885'Silicon wafer and method for manufacturing the same'20127,558,373'X-ray generator employing hemimorphic crystal and ozone generator employing it'2009

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009Patents assigned to DOSHISHA (1)· patent assignee history
2009Based in Hyogo, JP· patent location history
2012Patents assigned to FUKUSHIMA SEI (2)· patent assignee history
2012Patents assigned to NAKAI KATSUHIKO (2)· patent assignee history
2012Patents assigned to SILTRONIC AG (2)· patent assignee history
2012Patents assigned to SCHMIDT HERBERT (1)· patent assignee history
2012Based in Kanagawa, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FUKUSHIMA SEIself22012
NAKAI KATSUHIKO22012
SILTRONIC AG22012
DOSHISHA12009
SCHMIDT HERBERT12012
Locations
LocationPatentsSpan
Kanagawa, JP22012
Hyogo, JP12009