Inventor
Katherina E. Babich
Inventor
Chappaqua, NY, US
Overview
Patents· 47 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
Y10TTechnical subjects covered by former us classification10%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
C23CCoating metallic material8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H10DInorganic electric semiconductor devices5%
H01LSemiconductor devices4%
B82YSpecific uses or applications of nanostructures2%
H01JElectric discharge tubes or discharge lamps2%
PatentTitleYear
11,121,767Handling signals received on paths with differing numbers of hops202111,057,103Method and system of preconditioning transmitted signals202110,580,684Self-aligned single diffusion break for fully depleted silicon-on-insulator and method for producing the same20209,472,402'Methods and structures for protecting one area while processing another area on a chip'20169,099,537'Selective nanotube growth inside vias using an ion beam'20159,059,000'Methods and structures for protecting one area while processing another area on a chip'20158,895,352'Method to improve nucleation of materials on graphene and carbon nanotubes'20148,816,333'Method to improve nucleation of materials on graphene and carbon nanotubes'20148,754,530'Self-aligned borderless contacts for high density electronic and memory device integration'20148,609,322'Process of making a lithographic structure using antireflective materials'20138,497,212'Filling narrow openings using ion beam etch'20138,293,454'Process of making a lithographic structure using antireflective materials'20127,998,871'Mask forming and implanting methods using implant stopping layer'20117,968,270'Process of making a semiconductor device using multiple antireflective materials'20117,790,593'Method for tuning epitaxial growth by interfacial doping and structure including same'20107,736,833'Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof'20107,709,177'Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof'20107,651,947'Mask forming and implanting methods using implant stopping layer and mask so formed'20107,648,820'Antireflective hardmask and uses thereof'20107,611,758'Method of improving post-develop photoresist profile on a deposited dielectric film'20097,545,041'Techniques for patterning features in semiconductor devices'20097,497,959'Methods and structures for protecting one area while processing another area on a chip'20097,485,573'Process of making a semiconductor device using multiple antireflective materials'20097,361,444'Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof'20087,329,596'Method for tuning epitaxial growth by interfacial doping and structure including same'20087,326,442'Antireflective composition and process of making a lithographic structure'20087,223,517'Lithographic antireflective hardmask compositions and uses thereof'20077,175,966'Water and aqueous base soluble antireflective coating/hardmask materials'20077,172,849'Antireflective hardmask and uses thereof'20077,098,476'Multilayer interconnect structure containing air gaps and method for making'20067,077,903'Etch selectivity enhancement for tunable etch resistant anti-reflective layer'20067,030,008'Techniques for patterning features in semiconductor devices'20066,979,518'Attenuated embedded phase shift photomask blanks'20056,858,357'Attenuated embedded phase shift photomask blanks'20056,815,329'Multilayer interconnect structure containing air gaps and method for making'20046,759,321'Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation'20046,730,454'Antireflective SiO-containing compositions for hardmask layer'20046,730,445'Attenuated embedded phase shift photomask blanks'20046,686,124'Multifunctional polymeric materials and use thereof'20046,682,860'Attenuated embedded phase shift photomask blanks'20046,653,027'Attenuated embedded phase shift photomask blanks'20036,617,086'Forming a pattern of a negative photoresist'20036,514,667'Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof'20036,448,655'Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation'20026,428,894'Tunable and removable plasma deposited antireflective coatings'20026,316,167'Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof'20016,251,569'Forming a pattern of a negative photoresist'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2015Patents assigned to IBM (42)· patent assignee history
2001–2016Based in Chappaqua, NY, US· patent location history
2001Based in Chappagua, NY, US· patent location history
2012–2015Patents assigned to BABICH KATHERINA E (5)· patent assignee history
2012–2015Patents assigned to MAHOROWALA ARPAN P (3)· patent assignee history
2013–2020Patents assigned to GLOBALFOUNDRIES INC (3)· patent assignee history
2014–2015Patents assigned to BABICH KATHERINA (3)· patent assignee history
2014Based in Yorktown Heights, NY, US· patent location history
2020Based in Cold Spring, NY, US· patent location history
2021Based in Valparaiso, IN, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 42 | 2001–2015 |
| BABICH KATHERINA Eself | 5 | 2012–2015 |
| BABICH KATHERINAself | 3 | 2014–2015 |
| GLOBALFOUNDRIES INC | 3 | 2013–2020 |
| MAHOROWALA ARPAN P | 3 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Chappaqua, New York, US | 42 | 2001–2016 |
| Valparaiso, IN, US | 2 | 2021 |
| Cold Spring, New York, US | 1 | 2020 |
| Yorktown Heights, New York, US | 1 | 2014 |
| Chappagua, New York, US | 1 | 2001 |