Inventor

Shao-Chi Yu

Inventor

Hsinchu, TW

Overview

17→

Patents

2013–2019

Patent span

Electricity

Primary field (CPC H)

Patents· 17 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B81Bprimary

B81BMicrostructural devices or systems, e.g. micromechanical devices21%

B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems21%

H01LSemiconductor devices15%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%

H10DInorganic electric semiconductor devices10%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%

G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure4%

G01KMeasuring temperature2%

G01NInvestigating or analysing materials by determining their chemical or physical properties2%

PatentTitleYear

10,508,028Device for protecting FEOL element and BEOL element2019 10,464,808Semiconductor arrangement and formation thereof2019 10,392,244Method for sealing a cavity of a microelectromechanical systems (MEMS) device using a seal layer covering or lining a hole in fluid communication with the cavity2019 10,155,660Device and method for protecting FEOL element and BEOL element2018 10,131,540Structure and method to mitigate soldering offset for wafer-level chip scale package (WLCSP) applications2018 10,049,941Semiconductor isolation structure with air gaps in deep trenches2018 9,856,139'Microelectromechanical systems (MEMS) devices at different pressures'2018 9,845,236Monolithic MEMS platform for integrated pressure, temperature, and gas sensor2017 9,776,858'Semiconductor arrangement and formation thereof'2017 9,714,166'Thin film structure for hermetic sealing'2017 9,656,857'Microelectromechanical systems (MEMS) devices at different pressures'2017 9,614,031'Methods for forming a high-voltage super junction by trench and epitaxial doping'2017 9,567,204'Microelectrochemical systems (MEMS) device having a seal layer arranged over or lining a hole in fluid communication with a cavity of the MEMS device'2017 9,269,609'Semiconductor isolation structure with air gaps in deep trenches'2016 9,202,792'Structure and method of providing a re-distribution layer (RDL) and a through-silicon via (TSV)'2015 9,093,520'High-voltage super junction by trench and epitaxial doping'2015 8,558,330'Deep well process for MEMS pressure sensor'2013

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2013–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (3)· patent assignee history

2013–2016Patents assigned to SHUE HONG-SENG (2)· patent assignee history

2013–2016Patents assigned to YU SHAO-CHI (2)· patent assignee history

2013–2019Based in Hsinchu, TW· patent location history

2015–2019Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (14)· patent assignee history

2016Patents assigned to CHUNG MING-TAI (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	14	2015–2019
TAIWAN SEMICONDUCTOR MFG	3	2013–2016
SHUE HONG-SENG	2	2013–2016
YU SHAO-CHIself	2	2013–2016
CHUNG MING-TAI	1	2016

Locations

Location	Patents	Span
Hsinchu, TW	17	2013–2019