Inventor

Jung-Geun Jee

Inventor
Seoul, KR

Overview

20→
Patents
2008–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 20 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices29%
H10DInorganic electric semiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H01LSemiconductor devices15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
C23CCoating metallic material3%
PatentTitleYear
11,094,709Method of manufacturing semiconductor device20219,905,664'Semiconductor devices and methods of manufacturing the same'20189,698,231'Semiconductor devices'20179,613,800'Methods of manufacturing semiconductor devices including an oxide layer'20179,502,427'Non-volatile memory device and method of manufacturing the same'20169,490,140'Method for manufacturing semiconductor device'20169,368,508'Memory device'20169,184,172'Non-volatile memory devices and methods of manufacturing the same'20159,129,857'Semiconductor device including a first core pattern under a second core pattern'20159,111,897'Methods of forming a polysilicon layer and methods of manufacturing semiconductor devices'20158,610,195'Non-volatile memory devices and methods of manufacturing the same'20138,497,545'Method of forming nonvolatile memory device having floating gate and related device'20138,481,387'Method of forming an insulation structure and method of manufacturing a semiconductor device using the same'20138,431,983'Non-volatile memory device and method of fabricating the same'20138,008,214'Method of forming an insulation structure and method of manufacturing a semiconductor device using the same'20117,972,923'Non-volatile memory device and method of manufacturing the same'20117,888,204'Method of forming nonvolatile memory device having floating gate and related device'20117,855,117'Method of forming a thin layer and method of manufacturing a semiconductor device'20107,585,729'Method of manufacturing a non-volatile memory device'20097,410,869'Method of manufacturing a semiconductor device'2008

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2008–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (20)· patent assignee history
2008Based in Seongnam-si, KR· patent location history
2009–2021Based in Seoul, KR· patent location history
2013–2015Patents assigned to JEE JUNG-GEUN (7)· patent assignee history
2015Patents assigned to HWANG KI-HYUN (2)· patent assignee history
2016–2017Patents assigned to JEE JUNG GEUN (3)· patent assignee history
2016Patents assigned to KIM JIN GYUN (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD202008–2021
JEE JUNG-GEUNself72013–2015
JEE JUNG GEUNself32016–2017
HWANG KI-HYUN22015
KIM JIN GYUN22016
Locations
LocationPatentsSpan
Seoul, KR192009–2021
Seongnam-si, KR12008