Inventor

John Armer

Inventor
Middlesex, NJ, US

Overview

22→
Patents
1985–2010
Patent span
Electricity
Primary field (CPC H)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices53%
G06FElectric digital data processing13%
H03KPulse technique9%
H02HEmergency protective circuit arrangements6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
H04NPictorial communication, e.g. television3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
7,763,940'Device having a low-voltage trigger element'20107,589,944'Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies'20097,548,401'Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies'20097,414,273'Two-dimensional silicon controlled rectifier'20087,372,681'Electrostatic discharge (ESD) protection device with simultaneous and distributed self-biasing for multi-finger turn-on'20087,274,047'Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation'20077,233,467'Method and apparatus for protecting a gate oxide using source/bulk pumping'20077,098,394'Method and apparatus for powering circuitry with on-chip solar cells within a common substrate'20067,064,393'Electrostatic discharge protection structures having high holding current for latch-up immunity'20067,005,708'Minimum-dimension, fully-silicided MOS driver and ESD protection design for optimized inter-finger coupling'20066,909,149'Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies'20056,898,062'Electrostatic discharge (ESD) protection device with simultaneous and distributed self-biasing for multi-finger turn-on'20056,850,397'Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation'20056,803,633'Electrostatic discharge protection structures having high holding current for latch-up immunity'20046,791,122'Silicon controlled rectifier electrostatic discharge protection device with external on-chip triggering and compact internal dimensions for fast triggering'20046,770,918'Electrostatic discharge protection silicon controlled rectifier (ESD-SCR) for silicon germanium technologies'20046,768,616'Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies'20046,583,972'Multi-finger current ballasting ESD protection circuit and interleaved ballasting for ESD-sensitive circuits'20034,739,503'Carry/borrow propagate adder/subtractor'19884,722,066'Digital signal overflow correction apparatus'19884,685,079'Ripple-borrow binary subtraction circuit'19874,523,292'Complementary FET ripple carry binary adder circuit'1985

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1985–1988Patents assigned to RCA CORP (4)· patent assignee history
1985–2010Based in Middlesex, NJ, US· patent location history
2003–2009Patents assigned to SARNOFF CORP (10)· patent assignee history
2003–2008Patents assigned to SARNOFF EUROP (8)· patent assignee history
2005–2009Patents assigned to SARNOFF EUROP BVBA (4)· patent assignee history
2009–2010Patents assigned to SOFICS BVBA (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SARNOFF CORP102003–2009
SARNOFF EUROP82003–2008
RCA CORP41985–1988
SARNOFF EUROP BVBA42005–2009
SOFICS BVBA22009–2010
Locations
LocationPatentsSpan
Middlesex, New Jersey, US221985–2010