LexDanaLexDanabeta
Inventor

Mark P. D'Evelyn

Inventor
Niskayuna, NY, US

Overview

105→
Patents
2002–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 105 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth19%
H10HInorganic light-emitting semiconductor devices having potential barriers12%
Y10TTechnical subjects covered by former us classification9%
H01LSemiconductor devices8%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
Y02PClimate change mitigation technologies in the production or processing of goods4%
H10DInorganic electric semiconductor devices4%
PatentTitleYear
11,047,041Method and system for preparing polycrystalline group III metal nitride202110,975,492Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution202110,648,102Oxygen-doped group III metal nitride and method of manufacture202010,619,239Method and system for preparing polycrystalline group III metal nitride202010,604,865Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules202010,553,754Power light emitting diode and method with uniform current density operation202010,490,696III-nitride LED with tunnel junction2019RE047711White light devices using non-polar or semipolar gallium containing materials and phosphors201910,400,352Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate201910,301,745Large area, low-defect gallium-containing nitride crystals, method of making, and method of use201910,293,318Pressure release mechanism for capsule and method of use with supercritical fluids201910,208,396Crystalline gallium nitride containing flourine2019RE047241Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors201910,174,438Apparatus for high pressure reaction201910,145,026Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules2018RE047114Polycrystalline group III metal nitride with getter and method of making201810,100,425Method for synthesis of high quality large area bulk gallium based crystals201810,094,017Method and system for preparing polycrystalline group III metal nitride201810,087,550Reusable nitride wafer, method of making, and use thereof201810,036,099Process for large-scale ammonothermal manufacturing of gallium nitride boules20189,985,179Power light emitting diode and method with uniform current density operation20189,978,904Indium gallium nitride light emitting devices20189,768,353'Power light emitting diode and method with uniform current density operation'20179,724,666'Apparatus for large volume ammonothermal manufacture of gallium nitride crystals and methods of use'20179,650,723'Large area seed crystal for ammonothermal crystal growth and method of making'20179,653,554'Reusable nitride wafer, method of making, and use thereof'20179,589,792'High quality group-III metal nitride crystals, methods of making, and methods of use'20179,564,553'Power light emitting diode and method with uniform current density operation'20179,564,320'Large area nitride crystal and method for making it'20179,543,392'Transparent group III metal nitride and method of manufacture'20179,404,197'Large area, low-defect gallium-containing nitride crystals, method of making, and method of use'20169,299,555'Ultrapure mineralizers and methods for nitride crystal growth'20169,293,644'Power light emitting diode and method with uniform current density operation'20169,279,193'Method of making a gallium nitride crystalline composition having a low dislocation density'20169,275,912'Method for quantification of extended defects in gallium-containing nitride crystals'20169,175,418'Method for synthesis of high quality large area bulk gallium based crystals'20159,157,167'High pressure apparatus and method for nitride crystal growth'20158,986,447'High pressure apparatus and method for nitride crystal growth'20158,987,156'Polycrystalline group III metal nitride with getter and method of making'20158,979,999'Process for large-scale ammonothermal manufacturing of gallium nitride boules'20158,956,894'White light devices using non-polar or semipolar gallium containing materials and phosphors'20158,946,865'Gallium—nitride-on-handle substrate materials and devices and method of manufacture'20158,878,230'Semi-insulating group III metal nitride and method of manufacture'20148,871,024'High pressure apparatus and method for nitride crystal growth'20148,786,053'Gallium-nitride-on-handle substrate materials and devices and method of manufacture'20148,729,559'Method of making bulk InGaN substrates and devices thereon'20148,686,458'Power light emitting diode and method with current density operation'20148,618,560'Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors'20138,558,265'White light devices using non-polar or semipolar gallium containing materials and phosphors'20138,502,465'Power light emitting diode and method with current density operation'20138,494,017'Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods'20138,492,185'Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices'20138,482,104'Method for growth of indium-containing nitride films'20138,461,071'Polycrystalline group III metal nitride with getter and method of making'20138,455,894'Photonic-crystal light emitting diode and method of manufacture'20138,444,765'Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride'20138,435,347'High pressure apparatus with stackable rings'20138,430,958'Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride'20138,357,945'Gallium nitride crystal and method of making same'20138,354,679'Microcavity light emitting diode method of manufacture'20138,329,511'Nitride crystal with removable surface layer and methods of manufacture'20128,323,405'Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer'20128,306,081'High indium containing InGaN substrates for long wavelength optical devices'20128,303,710'High pressure apparatus and method for nitride crystal growth'20128,299,473'Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors'20128,284,810'Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods'20128,216,370'Method for reducing defect concentration in crystals'20128,148,801'Nitride crystal with removable surface layer and methods of manufacture'20128,124,996'White light devices using non-polar or semipolar gallium containing materials and phosphors'20128,097,081'High pressure apparatus and method for nitride crystal growth'20128,039,412'Crystalline composition, device, and associated method'20118,021,481'Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride'20117,942,970'Apparatus for making crystalline composition'20117,935,382'Method for making crystalline composition'20117,859,008'Crystalline composition, wafer, device, and associated method'20107,786,503'Gallium nitride crystals and wafers and method of making'20107,705,276'Heater, apparatus, and associated method'20107,704,324'Apparatus for processing materials in supercritical fluids and methods thereof'20107,642,122'Method for forming nitride crystals'20107,638,815'Crystalline composition, wafer, and semi-conductor structure'20097,625,446'High temperature high pressure capsule for processing materials in supercritical fluids'20097,582,498'Resonant cavity light emitting devices and associated method'20097,572,425'System and method for producing solar grade silicon'20097,527,742'Etchant, method of etching, laminate formed thereby, and device'20097,368,015'Apparatus for producing single crystal and quasi-single crystal, and associated method'20087,316,746'Crystals for a semiconductor radiation detector and method for making the crystals'20087,291,544'Homoepitaxial gallium nitride based photodetector and method of producing'20077,175,704'Method for reducing defect concentrations in crystals'20077,125,453'High temperature high pressure capsule for processing materials in supercritical fluids'20067,122,827'Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same'20067,119,372'Flip-chip light emitting diode'20067,101,433'High pressure/high temperature apparatus with improved temperature control for crystal growth'20067,102,158'Light-based system for detecting analytes'20067,098,487'Gallium nitride crystal and method of making same'20067,078,731'Gallium nitride crystals and wafers and method of making'20067,063,741'High pressure high temperature growth of crystalline group III metal nitrides'20067,053,413'Homoepitaxial gallium-nitride-based light emitting device and method for producing'20067,009,215'Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates'20066,936,488'Homoepitaxial gallium-nitride-based light emitting device and method for producing'20056,887,144'Surface impurity-enriched diamond and method of making'20056,861,130'Sintered polycrystalline gallium nitride and its production'20056,806,508'Homoepitaxial gallium nitride based photodetector and method of producing'20046,541,115'Metal-infiltrated polycrystalline diamond composite tool formed from coated diamond particles'20036,398,867'Crystalline gallium nitride and method for forming crystalline gallium nitride'20026,372,002'Functionalized diamond, methods for producing same, abrasive composites and abrasive tools comprising functionalized diamonds'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2010Patents assigned to GEN ELECTRIC (19)· patent assignee history
2002–2021Based in Niskayuna, NY, US· patent location history
2008–2016Patents assigned to MOMENTIVE PERFORMANCE MAT INC (15)· patent assignee history
2011–2021Patents assigned to SORAA INC (55)· patent assignee history
2011–2015Based in Goleta, CA, US· patent location history
2012–2015Patents assigned to D EVELYN MARK P (27)· patent assignee history
2013–2020Based in Santa Barbara, CA, US· patent location history
2013–2019Based in Fremont, CA, US· patent location history
2018–2021Patents assigned to SLT TECH INC (14)· patent assignee history
2021Based in Vancouver, WA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SORAA INC552011–2021
D EVELYN MARK Pself272012–2015
GEN ELECTRIC192002–2010
MOMENTIVE PERFORMANCE MAT INC152008–2016
SLT TECH INC142018–2021
Locations
LocationPatentsSpan
Niskayuna, New York, US392002–2021
Santa Barbara, California, US302013–2020
Goleta, California, US262011–2015
Fremont, California, US82013–2019
Vancouver, Washington, US12021