Inventor
Kurt Eisenbeiser
Inventor
Tempe, AZ, US
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution11%
C30BSingle-crystal growth7%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy7%
H10NElectric solid-state devices not otherwise provided for7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
Y10TTechnical subjects covered by former us classification6%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form4%
C09DCoating compositions, e.g. paints, varnishes or lacquers4%
PatentTitleYear
10,991,935Structural lithium-ion batteries with carbon fiber electrodes202110,418,189Enhanced structural supercapacitors201910,147,557Enhanced structural supercapacitors20188,168,318'Method for high volume manufacturing of thin film batteries'20127,776,386'Method for forming a micro fuel cell'20107,682,733'Thin film battery having textured layer'20106,693,298'Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same'20046,638,838'Semiconductor structure including a partially annealed layer and method of forming the same'20036,590,236'Semiconductor structure for use with high-frequency signals'20036,563,118'Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same'20036,555,946'Acoustic wave device and process for forming the same'20036,482,538'Microelectronic piezoelectric structure and method of forming the same'20026,432,546'Microelectronic piezoelectric structure and method of forming the same'20026,392,257'Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same'20026,365,474'Method of fabricating an integrated circuit'20026,309,918'Manufacturable GaAs VFET process'20016,262,451'Electrode structure for transistors, non-volatile memories and the like'20016,156,611'Method of fabricating vertical FET with sidewall gate electrode'20006,091,621'Non-volatile multistate memory cell using a ferroelectric gate fet'20006,057,566'Semiconductor device'20005,880,029'Method of passivating semiconductor devices and the passivated devices'19995,856,684'High power HFET with improved channel interfaces'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2010Patents assigned to MOTOROLA INC (18)· patent assignee history
1999–2012Based in Tempe, AZ, US· patent location history
2012Patents assigned to APPLIED MATERIALS INC (1)· patent assignee history
2012Patents assigned to CANDELARIA JON (1)· patent assignee history
2012Patents assigned to DAUKSHER WILLIAM J (1)· patent assignee history
2018–2021Patents assigned to MITRE CORP (3)· patent assignee history
2018–2021Based in Vienna, VA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MOTOROLA INC | 18 | 1999–2010 |
| MITRE CORP | 3 | 2018–2021 |
| APPLIED MATERIALS INC | 1 | 2012 |
| CANDELARIA JON | 1 | 2012 |
| DAUKSHER WILLIAM J | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tempe, AZ, US | 19 | 1999–2012 |
| Vienna, Virginia, US | 3 | 2018–2021 |