Inventor

Kiyoshi Ogata

Inventor

Kyoto, JP

Overview

1989–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 71 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%

C23CCoating metallic material11%

H10DInorganic electric semiconductor devices11%

Y10TTechnical subjects covered by former us classification6%

C08LCompositions of macromolecular compounds5%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%

C30BSingle-crystal growth3%

H01JElectric discharge tubes or discharge lamps3%

PatentTitleYear

10,876,978X-ray inspecting device, X-ray thin film inspecting method, and method for measuring rocking curve2020 10,514,345X-ray thin film inspection device2019 10,473,598X-ray thin film inspection device2019 8,873,715'Industrial X-ray tube'2014 8,712,013'Motion control system and X-ray measurement apparatus'2014 8,675,817'Industrial X-ray generator'2014 7,988,835'Silicon dot forming method and silicon dot forming apparatus'2011 7,986,041'Semiconductor device'2011 7,830,082'Organic light emitting diode display with porous insulation film containing SiO'2010 7,772,700'Semiconductor device'2010 7,747,337'Apparatus and method for managing audio data and recording apparatus'2010 7,521,744'Resin-encapsulated semiconductor apparatus and process for its fabrication'2009 7,372,154'Semiconductor device'2008 7,301,274'Organic light emitting diode display with insulating film which contains SiO'2007 7,247,525'Method for manufacturing a semiconductor device'2007 7,232,716'Display device and method for manufacturing the same'2007 7,227,186'Thin film transistor and method of manufacturing the same'2007 7,064,368'Resin-encapsulated semiconductor apparatus and process for its fabrication'2006 7,033,462'Vacuum arc vapor deposition process and apparatus'2006 6,995,058'Semiconductor memory device and manufacturing method thereof'2006 6,962,751'Amorphous carbon coated tools and method of producing the same'2005 6,905,928'MOS transistor apparatus and method of manufacturing same'2005 6,906,365'Ferroelectric memory device including an upper protection electrode'2005 6,903,371'Thin film transistor and display using the same'2005 6,897,503'Semiconductor memory device and manufacturing process for the same'2005 6,881,475'Amorphous carbon coated tool and fabrication method thereof'2005 6,870,224'MOS transistor apparatus and method of manufacturing same'2005 6,867,446'Semiconductor memory device'2005 6,847,125'Resin-encapsulated semiconductor apparatus and process for its fabrication'2005 6,838,771'Semiconductor device having conductor layers stacked on a substrate'2005 6,815,717'Thin-film transistor and method of manufacturing the same'2004 6,767,760'Process of manufacturing a thin-film transistor'2004 6,716,688'Irradiation of manufacturing a thin film transistor by laser irradiation'2004 6,670,638'Liquid crystal display element and method of manufacturing the same'2003 6,656,592'Carbon film and method of forming the same'2003 6,657,245'Resin-encapsulated semiconductor apparatus and process for its fabrication'2003 6,657,227'Transistor with thin film active region having clusters of different crystal orientation'2003 6,623,986'Method of manufacturing a ferroelectric memory device'2003 6,617,630'Resin-encapsulated semiconductor apparatus and process for its fabrication'2003 6,579,754'Semiconductor memory device having ferroelectric film and manufacturing method thereof'2003 6,525,359'Resin-encapsulated semiconductor apparatus and process for its fabrication'2003 6,468,884'Method of forming silicon-contained crystal thin film'2002 6,465,827'Resin-encapsulated semiconductor apparatus and process for its fabrication'2002 6,445,025'Semiconductor memory device and manufacturing method thereof'2002 6,441,416'Resin-encapsulated semiconductor apparatus and process for its fabrication'2002 6,383,896'Thin film forming method and thin film forming apparatus'2002 6,358,313'Method of manufacturing a crystalline silicon base semiconductor thin film'2002 6,316,798'Ferroelectric memory device and method for manufacturing the same'2001 6,294,479'Film forming method and apparatus'2001 6,258,173'Film forming apparatus for forming a crystalline silicon film'2001 6,239,457'Semiconductor memory device and manufacturing method thereof'2001 6,147,374'Resin-encapsulated semiconductor apparatus'2000 6,116,187'Thin film forming apparatus'2000 6,103,321'Method of manufacturing an ultraviolet resistant object'2000 6,051,120'Thin film forming apparatus'2000 6,031,694'Magnetic head with protective film comprising amorphous CaMgSi.sub.2 b. O.su6, Mg.sub.2 SiO.sub.4 and/or MgAl.sub.2 O.sub.4'2000 5,691,064'Release film for part with pressure-sensitive adhesive attached'1997 5,501,911'Copper crystal film coated organic substrate'1996 5,496,772'Method of manufacturing film carrier type substrate'1996 5,431,794'Process for forming metal films by plasma sputtering'1995 5,316,802'Method of forming copper film on substrate'1994 5,283,095'Optical recording medium comprising (1,1,1) aluminum'1994 5,250,327'Composite substrate and process for producing the same'1993 5,218,335'Electronic circuit device having thin film resistor and method for producing the same'1993 5,122,483'Method of forming a highly insulative thin films'1992 5,086,088'Epoxy-acrylate blend pressure-sensitive thermosetting adhesives'1992 5,009,923'Method of forming diamond film'1991 4,997,673'Method of forming aluminum nitride films by ion-assisted evaporation'1991 4,875,284'Process for producing a package for packing semiconductor devices'1989 4,831,212'Package for packing semiconductor devices and process for producing the same'1989 4,828,870'Method of forming a thin aluminum film'1989

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989–2011Patents assigned to NISSIN ELECTRIC CO LTD (24)· patent assignee history

1989–2011Based in Kyoto, JP· patent location history

1993–2007Patents assigned to HITACHI LTD (23)· patent assignee history

1993–2009Based in Yokohama, JP· patent location history

2003–2020Based in Tokyo, JP· patent location history

2004–2005Based in Kawasaki, JP· patent location history

2005–2010Patents assigned to RENESAS TECH CORP (10)· patent assignee history

2007–2010Patents assigned to HITACHI DISPLAYS LTD (3)· patent assignee history

2014–2020Patents assigned to RIGAKU DENKI CO LTD (6)· patent assignee history

2014Based in Minato-ku, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
NISSIN ELECTRIC CO LTD	24	1989–2011
HITACHI LTD	23	1993–2007
RENESAS TECH CORP	10	2005–2010
RIGAKU DENKI CO LTD	6	2014–2020
HITACHI DISPLAYS LTD	3	2007–2010

Locations

Location	Patents	Span
Kyoto, JP	23	1989–2011
Yokohama, JP	19	1993–2009
Tokyo, JP	15	2003–2020
Kawasaki, JP	7	2004–2005
Minato-ku, JP	2	2014