Inventor
Hitoshi Kume
Inventor
Musashino, JP
Overview
Patents· 95 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores38%
H10BElectronic memory devices30%
H10DInorganic electric semiconductor devices25%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
G01RMeasuring electric variables1%
H10NElectric solid-state devices not otherwise provided for1%
Y10TTechnical subjects covered by former us classification1%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h100%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h100%
PatentTitleYear
8,482,997'Method of manufacturing non-volatile memory module'20138,456,940'Semiconductor device'20138,130,575'Semiconductor device'20128,132,063'Semiconductor device'20128,094,489'Semiconductor device'20128,072,809'Nonvolatile semiconductor memory'20117,996,735'Semiconductor device'20117,983,109'Semiconductor device'20117,894,232'Semiconductor device having user field and vendor field'20117,830,706'Semiconductor device'20107,746,697'Nonvolatile semiconductor memory'20107,468,913'Semiconductor device'20087,399,667'Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elements'20087,372,741'Nonvolatile memory apparatus having a processor and plural memories one or more of which is a nonvolatile memory having circuitry which performs an erase operation and an erase verify operation when the processor specifies the erase operation mode to the nonvolatile memory'20087,366,016'Nonvolatile semiconductor memory'20087,366,015'Semiconductor integrated circuit device, production and operation method thereof'20087,180,774'Semiconductor integrated circuit device including first, second and third gates'20077,173,853'Nonvolatile semiconductor memory'20077,130,223'Nonvolatile semiconductor memory device'20067,110,320'Nonvolatile semiconductor memory'20067,105,409'Semiconductor integrated circuit device and process for producing the same'20067,099,199'Nonvolatile semiconductor memory device'20067,092,296'Nonvolatile semiconductor memory'20067,071,050'Semiconductor integrated circuit device having single-element type non-volatile memory elements'20067,020,028'Nonvolatile semiconductor memory device'20066,972,997'Nonvolatile semiconductor memory device'20056,960,501'Method of manufacturing a semiconductor memory device having a non-volatile memory cell portion with single misfet transistor type memory cells and a peripheral circuit portion with misfets'20056,901,006'Semiconductor integrated circuit device including first, second and third gates'20056,833,582'Nonvolatile semiconductor memory device'20046,815,231'Method of testing and manufacturing nonvolatile semiconductor memory'20046,797,566'Semiconductor integrated circuit device and process for producing the same'20046,791,882'Nonvolatile semiconductor memory device'20046,777,282'Method of manufacturing a semiconductor memory device having a memory cell portion including MISFETs with a floating gate and a peripheral circuit portion with MISFETs'20046,747,902'Nonvolatile semiconductor memory apparatus'20046,738,310'Nonvolatile semiconductor memory'20046,687,156'Semiconductor integrated circuit device, production and operation method thereof'20046,657,248'Semiconductor device having groove isolation structure and gate oxide films with different thickness'20036,617,632'Semiconductor device and a method of manufacturing the same'20036,538,926'Nonvolatile semiconductor memory system with capability of starting a new program operation while an existing program operation is being performed'20036,510,086'Nonvolatile semiconductor memory'2003RE037959'Semiconductor integrated circuit device and method of manufacturing the same'20036,451,643'Method of manufacturing a semiconductor device having non-volatile memory cell portion with single transistor type memory cells and peripheral portion with MISFETs'20026,438,036'Nonvolatile semiconductor memory device'20026,438,028'Semiconductor integrated circuit device, production and operation method thereof'20026,406,958'Method of manufacturing nonvolatile semiconductor memory device'20026,370,059'Nonvolatile semiconductor memory'20026,335,880'Nonvolatile semiconductor memory'20026,288,941'Electrically erasable semiconductor non-volatile memory device having memory cell array divided into memory blocks'20016,272,042'Nonvolatile semiconductor memory'2001RE037311'Parallel type nonvolatile semiconductor memory device and method of using the same'20016,259,629'Nonvolatile semiconductor memory device'20016,255,690'Non-volatile semiconductor memory device'20016,243,290'Nonvolatile semiconductor memory device'20016,211,546'Method of manufacturing nonvolatile semiconductor memory device'20016,201,735'Electrically erasable and programmable nonvolatile semiconductor memory'20016,181,600'Nonvolatile semiconductor memory device'20016,157,576'Nonvolatile semiconductor memory device'20006,101,123'Nonvolatile semiconductor memory with programming and erasing verification'20006,016,273'Nonvolatile semiconductor memory device'20005,991,200'Nonvolatile semiconductor memory device'19995,959,894'Nonvolatile semiconductor memory device'19995,949,715'Nonvolatile semiconductor memory device'19995,932,909'Nonvolatile semiconductor memory device'19995,917,752'Nonvolatile semiconductor memory device'19995,910,913'Non-volatile semiconductor memory'19995,904,518'Method of manufacturing a semiconductor IC device having single transistor type nonvolatile memory cells'19995,844,842'Nonvolatile semiconductor memory device'19985,828,600'Non-volatile semiconductor memory'19985,814,543'Method of manufacturing a semicondutor integrated circuit device having nonvolatile memory cells'19985,793,678'Parellel type nonvolatile semiconductor memory device method of using the same'19985,781,476'Nonvolatile semiconductor memory device'19985,672,529'Method of manufacturing nonvolatile semiconductor memory device'19975,656,839'Semiconductor integrated circuit device having single-element type nonvolatile memory elements'19975,656,522'Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elements'19975,629,541'Semiconductor memory device constituted by single transistor type non-volatile cells and facilitated for both electrical erasing and writing of data'19975,604,142'Method of making an EPROM with peripheral transistor'19975,602,048'Semiconductor integrated circuit device and method of manufacturing the same'19975,592,415'Non-volatile semiconductor memory'19975,581,508'Semiconductor memory having sub-word line replacement'19965,553,021'Semiconductor integrated circuit device including a voltage generator for providing desired interval internal voltages'19965,532,971'Nonvolatile semiconductor memory having enhanced speed for erasing and programming'19965,472,891'Method of manufacturing a semiconductor device'19955,467,309'Semiconductor nonvolatile memory device having reduced switching overhead time on the program mode'19955,445,980'Method of making a semiconductor memory device'19955,446,690'Semiconductor nonvolatile memory device'19955,407,853'Method of making semiconductor integrated circuit device having single-element type non-volatile memory elements'19955,340,760'Method of manufacturing EEPROM memory device'19945,300,802'Semiconductor integrated circuit device having single-element type non-volatile memory elements'19945,189,497'Semiconductor memory device'19935,188,976'Manufacturing method of non-volatile semiconductor memory device'19935,153,144'Method of making tunnel EEPROM'19925,079,603'Semiconductor memory device'19924,996,571'Non-volatile semiconductor memory device erasing operation'19914,972,371'Semiconductor memory device'19904,633,438'Stacked semiconductor memory'1986Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1986–2013Patents assigned to HITACHI LTD (71)· patent assignee history
1986–2013Based in Musashino, JP· patent location history
1991–2008Patents assigned to HITACHI DEVICE ENG (7)· patent assignee history
1994–2013Patents assigned to KUME HITOSHI (7)· patent assignee history
1996–2002Patents assigned to HITACHI ULSI ENG CORP (8)· patent assignee history
1998–2003Based in Tokyo, JP· patent location history
2004–2008Patents assigned to RENESAS TECH CORP (16)· patent assignee history
2007–2008Based in Musahino, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI LTD | 71 | 1986–2013 |
| RENESAS TECH CORP | 16 | 2004–2008 |
| HITACHI ULSI ENG CORP | 8 | 1996–2002 |
| HITACHI DEVICE ENG | 7 | 1991–2008 |
| KUME HITOSHIself | 7 | 1994–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Musashino, JP | 91 | 1986–2013 |
| Musahino, JP | 2 | 2007–2008 |
| Tokyo, JP | 2 | 1998–2003 |