Inventor
Koichi Naniwae
Inventor
Tokyo, JP
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers31%
H01LSemiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
G02BOptical elements, systems or apparatus6%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light6%
C03CChemical composition of glasses, glazes or vitreous enamels3%
C09KMaterials for miscellaneous applications, not provided for elsewhere3%
F21KNon-electric light sources using luminescence3%
F21YIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to the form or the kind of the light sources or of the colour of the light emitted3%
H10DInorganic electric semiconductor devices3%
PatentTitleYear
10,923,882Nitride semiconductor light-emitting device20219,853,183Method for manufacturing light emitting element and light emitting element20179,793,434'LED element and method of manufacturing the same'20179,634,188'LED element'20179,590,150'Light-emitting device'20179,472,736'Etching method'20169,142,619'Group III nitride semiconductor device and method for manufacturing the same'20159,117,967'Method of manufacturing glass substrate with concave-convex film using dry etching, glass substrate with concave-convex film, solar cell, and method of manufacturing solar cell'20157,454,111'Optical device of waveguide type and its production method'20086,681,064'Multi-wavelength semiconductor light source and process for producing the same'20046,320,208'II-VI compound semiconductor device'20016,178,190'II-VI compound semiconductor light emitting device'20016,072,202'II-VI compound semiconductor device with III-V buffer layer'20005,773,850'Semiconductor device having a ZnCdSe buffer layer with a II-VI compound semiconductor layer containing Te grown thereon'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2008Patents assigned to NEC CORP (6)· patent assignee history
1998–2021Based in Tokyo, JP· patent location history
2004Based in Minato-ku, JP· patent location history
2015Patents assigned to EL SEED CORP (2)· patent assignee history
2015Patents assigned to KITANO TSUKASA (2)· patent assignee history
2015Patents assigned to KONDO TOSHIYUKI (2)· patent assignee history
2015–2017Based in Nagoya, JP· patent location history
2015Based in Aichi, JP· patent location history
2016–2017Patents assigned to EL-SEED CORP (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 6 | 1998–2008 |
| EL-SEED CORP | 5 | 2016–2017 |
| EL SEED CORP | 2 | 2015 |
| KITANO TSUKASA | 2 | 2015 |
| KONDO TOSHIYUKI | 2 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 6 | 1998–2021 |
| Nagoya, JP | 6 | 2015–2017 |
| Aichi, JP | 1 | 2015 |
| Minato-ku, JP | 1 | 2004 |