Inventor
Changhua Chen
Inventor
San Jose, CA, US
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers34%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light24%
G02BOptical elements, systems or apparatus10%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
H10DInorganic electric semiconductor devices3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
9,977,187Polarization rotator-splitter/combiner based on silicon rib-type waveguides20189,946,029Optical coupler having anchored cantilever structure with multi-stage inverse taper core waveguide and fabrication method thereof20189,810,667'Heel test block'20179,429,776'Silicon-based rib-waveguide modulator and fabrication method thereof'20169,285,651'Electro-optic silicon modulator with longitudinally nonuniform modulation'20169,223,185'Electro-optic silicon modulator with alternative capacitance-loaded coplanar waveguide structures'20157,345,323'Formation of Ohmic contacts in III-nitride light emitting devices'20086,914,272'Formation of Ohmic contacts in III-nitride light emitting devices'20056,888,171'Light emitting diode'20056,794,731'Minority carrier semiconductor devices with improved reliability'20046,657,300'Formation of ohmic contacts in III-nitride light emitting devices'20036,630,695'InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire'20036,500,257'Epitaxial material grown laterally within a trench and method for producing same'20026,495,867'InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire'20026,274,399'Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices'20016,194,742'Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices'20015,909,051'Minority carrier semiconductor devices with improved stability'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2008Based in San Jose, CA, US· patent location history
2001–2005Patents assigned to LUMILEDS LIGHTING LLC (5)· patent assignee history
2002Patents assigned to AGILENT TECHNOLOGIES INC (1)· patent assignee history
2002Patents assigned to AXT INC (1)· patent assignee history
2002Based in Santa Clara, CA, US· patent location history
2005Based in Los Angeles, CA, US· patent location history
2015–2016Patents assigned to SIFOTONICS TECHNOLOGIES CO LTD (2)· patent assignee history
2015–2018Based in Beijing, CN· patent location history
2016–2018Patents assigned to SIFOTONICS TECH CO LTD (3)· patent assignee history
2017Based in Jiangsu, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| LUMILEDS LIGHTING LLC | 5 | 2001–2005 |
| SIFOTONICS TECH CO LTD | 3 | 2016–2018 |
| SIFOTONICS TECHNOLOGIES CO LTD | 2 | 2015–2016 |
| AGILENT TECHNOLOGIES INC | 1 | 2002 |
| AXT INC | 1 | 2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 9 | 1999–2008 |
| Beijing, CN | 5 | 2015–2018 |
| Jiangsu, CN | 1 | 2017 |
| Los Angeles, California, US | 1 | 2005 |
| Santa Clara, California, US | 1 | 2002 |