Inventor
Gabriel Molas
Inventor
Grenoble, FR
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores26%
H01LSemiconductor devices24%
H10NElectric solid-state devices not otherwise provided for19%
H10BElectronic memory devices17%
H10DInorganic electric semiconductor devices12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
10,878,900Method for using electrochemical components for storage of energy and information and associated electronic circuit202010,803,940Method for programming a resistive random access memory202010,748,917Semiconductor memory component integrating a nano-battery, semiconductor device including such a component and method using such a device202010,475,509Method for managing the endurance of a non-volatile rewritable memory and device for programming such a memory201910,438,660Method for determining a memory window of a resistive random access memory201910,388,376Method for managing the endurance of a non-volatile rewritable memory and device for programming such a memory201910,002,664Non-volatile resistive memory cell comprising metal electrodes and a solid electrolyte between the metal electrodes20189,748,477'Method of forming a conductive filament in a living resistive memory device including a pre-forming step to form a localised path of oxygen vacancies from an interface layer'20179,722,177'Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metal'20179,633,725'Method for determining electrical parameters used to programme a resistive random access memory'20179,431,607'Metal-oxide-based conductive-bridging random access memory (CBRAM) having the solid electrolyte doped with a second metal'20169,209,391'Electronic memory device having an electrode made of a soluble material'20159,053,976'Structure and production process of a microelectronic 3D memory device of flash NAND type'20158,710,574'Dual gate electronic memory cell and device with dual gate electronic memory cells'20148,685,819'Method for the realization of a crossbar array of crossed conductive or semi-conductive access lines'20148,252,702'Fabrication of a memory with two self-aligned independent gates'20127,968,398'Method for producing a floating gate with an alternation of lines of first and second materials'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2020Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (15)· patent assignee history
2011–2014Patents assigned to CENTRE NAT RECH SCIENT (3)· patent assignee history
2011–2020Based in Grenoble, FR· patent location history
2012–2015Patents assigned to MOLAS GABRIEL (4)· patent assignee history
2012–2014Patents assigned to BARON THIERRY (2)· patent assignee history
2015–2017Patents assigned to COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| COMMISSARIAT ENERGIE ATOMIQUE | 15 | 2011–2020 |
| COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES | 5 | 2015–2017 |
| MOLAS GABRIELself | 4 | 2012–2015 |
| CENTRE NAT RECH SCIENT | 3 | 2011–2014 |
| BARON THIERRY | 2 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Grenoble, FR | 17 | 2011–2020 |