Inventor
Kanwal K. Raina
Inventor
Boise, ID, US
Overview
Patents· 40 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps37%
C23CCoating metallic material15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
H10DInorganic electric semiconductor devices9%
Y10TTechnical subjects covered by former us classification4%
C03CChemical composition of glasses, glazes or vitreous enamels3%
C30BSingle-crystal growth3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
7,268,481'Field emission display with smooth aluminum film'20077,239,075'Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate'20077,161,211'Aluminum-containing film derived from using hydrogen and oxygen gas in sputter deposition'20077,101,586'Method to increase the emission current in FED displays through the surface modification of the emitters'20067,097,526'Method of forming nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate'20067,088,037'Field emission display device'20067,052,923'Field emission display with smooth aluminum film'20066,911,766'Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate'20056,893,905'Method of forming substantially hillock-free aluminum-containing components'20056,838,815'Field emission display with smooth aluminum film'20056,831,403'Field emission display cathode assembly'20046,657,376'Electron emission devices and field emission display devices having buffer layer of microcrystalline silicon'20036,638,399'Deposition of smooth aluminum films'20036,635,983'Nitrogen and phosphorus doped amorphous silicon as resistor for field emission device baseplate'20036,545,407'Electron emission apparatus'20036,537,427'Deposition of smooth aluminum films'20036,509,686'Field emission display cathode assembly with gate buffer layer'20036,461,211'Method of forming resistor with adhesion layer for electron emission device'20026,455,939'Substantially hillock-free aluminum-containing components'20026,440,505'Methods for forming field emission display devices'20026,425,791'Method of making a field emission device with buffer layer'20026,348,403'Suppression of hillock formation in thin aluminum films'20026,264,750'Method and system for forming SbSI thin films'20016,239,548'Microelectronic substrate assemblies having elements in low compression state'20016,222,271'Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom'20016,211,608'Field emission device with buffer layer and method of making'20016,194,783'Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom'20016,165,568'Methods for forming field emission display devices'20006,153,262'Method for forming SbSI thin films'20006,140,701'Suppression of hillock formation in thin aluminum films'20006,139,385'Method of making a field emission device with silicon-containing adhesion layer'20006,137,214'Display device with silicon-containing adhesion layer'20006,107,688'Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition'20006,106,351'Methods of manufacturing microelectronic substrate assemblies for use in planarization processes'20006,064,149'Field emission device with silicon-containing adhesion layer'20006,057,238'Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom'20006,015,323'Field emission display cathode assembly government rights'20005,969,423'Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition'19995,407,906'Epitaxial layers of 2122 BCSCO superconductor thin films having single crystalline structure'19955,314,869'Method for forming single phase, single crystalline 2122 BCSCO superconductor thin films by liquid phase epitaxy'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–2001Patents assigned to TEXAS A & M UNIV SYS (4)· patent assignee history
1994–1995Based in College Station, TX, US· patent location history
1999–2007Patents assigned to MICRON TECHNOLOGY INC (36)· patent assignee history
1999–2007Based in Boise, ID, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 36 | 1999–2007 |
| TEXAS A & M UNIV SYS | 4 | 1994–2001 |
Locations
| Location | Patents | Span |
|---|---|---|
| Boise, ID, US | 38 | 1999–2007 |
| College Station, Texas, US | 2 | 1994–1995 |