Inventor
Masayuki Senoh
Inventor
Anan-shi, JP
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers24%
H10DInorganic electric semiconductor devices14%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution14%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light9%
B82YSpecific uses or applications of nanostructures8%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h101%
PatentTitleYear
8,541,794'Nitride semiconductor light-emitting devices'20137,615,804'Superlattice nitride semiconductor LD device'20097,375,383'Gallium nitride based III-V group compound semiconductor device and method of producing the same'20087,211,822'Nitride semiconductor device'20077,205,220'Gallium nitride based III-V group compound semiconductor device and method of producing the same'20077,149,233'Semiconductor laser device and its manufacturing method'20066,998,690'Gallium nitride based III-V group compound semiconductor device and method of producing the same'20066,849,864'Nitride semiconductor device'20056,677,619'Nitride semiconductor device'20046,610,995'Gallium nitride-based III-V group compound semiconductor'20036,507,041'Gallium nitride-based III-V group compound semiconductor'20036,204,512'Gallium nitride-based III-V group compound semiconductor device and method of producing the same'20016,172,382'Nitride semiconductor light-emitting and light-receiving devices'20016,093,965'Gallium nitride-based III-V group compound semiconductor'20005,877,558'Gallium nitride-based III-V group compound semiconductor'19995,767,581'Gallium nitride-based III-V group compound semiconductor'19985,652,434'Gallium nitride-based III-V group compound semiconductor'19975,563,422'Gallium nitride-based III-V group compound semiconductor device and method of producing the same'19965,468,678'Method of manufacturing P-type compound semiconductor'19955,306,662'Method of manufacturing P-type compound semiconductor'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–2013Patents assigned to NICHIA KAGAKU KOGYO KK (15)· patent assignee history
1994–2013Based in Anan-shi, JP· patent location history
2003–2008Patents assigned to NICHIA CORP (5)· patent assignee history
2013Patents assigned to NAGAHAMA SHINICHI (1)· patent assignee history
2013Patents assigned to NAKAMURA SHUJI (1)· patent assignee history
2013Patents assigned to SENOH MASAYUKI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NICHIA KAGAKU KOGYO KK | 15 | 1994–2013 |
| NICHIA CORP | 5 | 2003–2008 |
| NAGAHAMA SHINICHI | 1 | 2013 |
| NAKAMURA SHUJI | 1 | 2013 |
| SENOH MASAYUKIself | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Anan-shi, JP | 20 | 1994–2013 |