Inventor
Matthew N. Rocklein
Inventor
Boise, ID, US
Overview
Patents· 31 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices24%
H01LSemiconductor devices21%
H10BElectronic memory devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
G11CStatic stores7%
H10NElectric solid-state devices not otherwise provided for7%
C23CCoating metallic material4%
B82YSpecific uses or applications of nanostructures3%
H01GCapacitors3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
PatentTitleYear
11,043,502Semiconductor devices including ferroelectric materials202110,985,239Oxidative trim202110,964,536Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratio202110,811,419Storage node shaping202010,600,788Integrated assemblies comprising stud-type capacitors202010,586,923Resistive memory cell202010,438,643Devices and apparatuses including asymmetric ferroelectric materials, and related methods201910,403,630Semiconductor devices including ferroelectric materials201910,192,605Memory cells and semiconductor devices including ferroelectric materials201910,177,152Integrated assemblies comprising stud-type capacitors201910,147,474Memory cells and semiconductor devices including ferroelectric materials201810,062,703Methods of forming a ferroelectric memory cell20189,899,072'Methods of operating ferroelectric memory cells, and related ferroelectric memory cells and capacitors'20189,698,343'Semiconductor device structures including ferroelectric memory cells'20179,697,881'Methods of operating ferroelectric memory cells, and related ferroelectric memory cells and capacitors'20179,627,501'Graded dielectric structures'20179,576,805'Fortification of charge-storing material in high-K dielectric environments and resulting apparatuses'20179,466,660'Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures'20169,460,770'Methods of operating ferroelectric memory cells, and related ferroelectric memory cells'20169,231,206'Methods of forming a ferroelectric memory cell'20169,159,921'Resistive memory cell'20159,006,702'Semiconductor structure including a zirconium oxide material'20158,987,806'Fortification of charge storing material in high K dielectric environments and resulting apparatuses'20158,951,903'Graded dielectric structures'20158,940,388'Insulative elements'20158,847,196'Resistive memory cell'20148,637,846'Semiconductor structure including a zirconium oxide material'20148,288,811'Fortification of charge-storing material in high-K dielectric environments and resulting apparatuses'20128,110,469'Graded dielectric layers'20127,863,198'Method and device to vary growth rate of thin films over semiconductor structures'20117,547,952'Method for hafnium nitride deposition'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009Based in Boulder, CO, US· patent location history
2011–2021Patents assigned to MICRON TECHNOLOGY INC (29)· patent assignee history
2011–2021Based in Boise, ID, US· patent location history
2012–2015Patents assigned to ROCKLEIN MATTHEW N (5)· patent assignee history
2012–2015Patents assigned to RAMASWAMY D V NIRMAL (4)· patent assignee history
2012–2015Patents assigned to BHAT VISHWANATH (3)· patent assignee history
2012–2015Patents assigned to GEALY DAN (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 29 | 2011–2021 |
| ROCKLEIN MATTHEW Nself | 5 | 2012–2015 |
| RAMASWAMY D V NIRMAL | 4 | 2012–2015 |
| BHAT VISHWANATH | 3 | 2012–2015 |
| GEALY DAN | 2 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Boise, ID, US | 30 | 2011–2021 |
| Boulder, CO, US | 1 | 2009 |