Inventor
C. Joseph Mogab
Inventor
Austin, TX, US
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
C23FNon-mechanical removal of metallic material from surface11%
C23CCoating metallic material7%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices7%
H10BElectronic memory devices7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
B82YSpecific uses or applications of nanostructures4%
G01NInvestigating or analysing materials by determining their chemical or physical properties4%
PatentTitleYear
6,297,169'Method for forming a semiconductor device using a mask having a self-assembled monolayer'20016,027,961'CMOS semiconductor devices and method of formation'20005,510,651'Semiconductor device having a reducing/oxidizing conductive material'19965,464,711'Process for fabricating an X-ray absorbing mask'19955,407,855'Process for forming a semiconductor device having a reducing/oxidizing conductive material'19955,337,207'High-permittivity dielectric capacitor for use in a semiconductor device and process for making the same'19945,254,217'Method for fabricating a semiconductor device having a conductive metal oxide'19934,312,732'Method for the optical monitoring of plasma discharge processing operations'19824,227,975'Selective plasma etching of dielectric masks in the presence of native oxides of group III-V compound semiconductors'19804,226,665'Device fabrication by plasma etching'19804,211,601'Device fabrication by plasma etching'19804,208,241'Device fabrication by plasma etching'1980RE030244'Radial flow reactor including glow discharge limitting shield'19804,033,287'Radial flow reactor including glow discharge limiting shield'1977Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1977–1982Patents assigned to BELL TELEPHONE LABOR INC (6)· patent assignee history
1977Based in Murray Hill, NJ, US· patent location history
1980Based in Berkeley Heights, NJ, US· patent location history
1982Based in New Providence, NJ, US· patent location history
1993–2001Patents assigned to MOTOROLA INC (7)· patent assignee history
1993–2001Based in Austin, TX, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MOTOROLA INC | 7 | 1993–2001 |
| BELL TELEPHONE LABOR INC | 6 | 1977–1982 |
Locations
| Location | Patents | Span |
|---|---|---|
| Austin, Texas, US | 7 | 1993–2001 |
| Berkeley Heights, New Jersey, US | 5 | 1980 |
| New Providence, New Jersey, US | 1 | 1982 |
| Murray Hill, New Jersey, US | 1 | 1977 |