Inventor
Shiro Akamatsu
Inventor
Anan-shi, JP
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices50%
G11CStatic stores20%
H10BElectronic memory devices20%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%
PatentTitleYear
7,560,752'Field effect transistor including two group III-V compound semiconductor layers'20097,459,718'Field effect transistor'20087,339,206'Field effect transistor including a group III-V compound semiconductor layer'20086,423,584'method for forming capacitors and field effect transistors in a semiconductor integrated circuit device'20026,420,754'Semiconductor integrated circuit device'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002Patents assigned to HITACHI LTD (2)· patent assignee history
2002Based in Kodaira, JP· patent location history
2008–2009Patents assigned to NICHIA CORP (3)· patent assignee history
2008–2009Based in Anan-shi, JP· patent location history
2008Based in Tokushima, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NICHIA CORP | 3 | 2008–2009 |
| HITACHI LTD | 2 | 2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| Anan-shi, JP | 2 | 2008–2009 |
| Kodaira, JP | 2 | 2002 |
| Tokushima, JP | 1 | 2008 |