Inventor

Sung-Dae Suk

Inventor

Seoul, KR

Overview

2007–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 45 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices40%

H01LSemiconductor devices29%

B82YSpecific uses or applications of nanostructures10%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%

H10BElectronic memory devices2%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%

PatentTitleYear

11,101,166Semiconductor device including isolation layers and method of manufacturing the same2021 10,818,802Semiconductor device2020 10,734,273Semiconductor device including isolation layers and method of manufacturing the same2020 10,453,864Semiconductor device and method for fabricating the same2019 10,403,754Semiconductor devices and methods of manufacturing the same2019 10,304,964Semiconductor device2019 10,204,983Semiconductor device and method for fabricating the same2019 10,186,579Semiconductor devices2019 10,128,346Semiconductor device2018 10,109,631Semiconductor device2018 9,991,387Semiconductor devices2018 9,985,141Semiconductor device2018 9,929,160'Semiconductor devices and methods of manufacturing the same'2018 9,923,058'Semiconductor device having a fin'2018 9,871,103'Semiconductor device'2018 9,825,183'Semiconductor device including gate electrode extending between nanosheets'2017 9,818,748'Semiconductor device and fabricating method thereof'2017 9,806,194'FinFET with fin having different Ge doped region'2017 9,679,965'Semiconductor device having a gate all around structure and a method for fabricating the same'2017 9,653,462'Semiconductor device and method for fabricating the same'2017 9,613,871'Semiconductor device and fabricating method thereof'2017 9,601,569'Semiconductor device having a gate all around structure'2017 9,431,522'Methods of manufacturing FINFET semiconductor devices using sacrificial gate patterns and selective oxidization of a fin'2016 9,425,259'Semiconductor device having a fin'2016 9,412,849'Method of fabricating semiconductor device'2016 9,362,311'Method of fabricating semiconductor device'2016 9,276,087'Methods of manufacturing FINFET semiconductor devices using sacrificial gate patterns and selective oxidization of a fin'2016 9,171,845'Integrated junction and junctionless nanotransistors'2015 9,130,040'FinFET semiconductor device and method of manufacturing the same'2015 9,123,774'Semiconductor devices and methods of fabricating the same'2015 9,048,120'Integrated junction and junctionless nanotransistors'2015 9,012,281'Semiconductor device fabrication methods'2015 8,461,653'Semiconductor devices including fin shaped semiconductor regions and stress inducing layers'2013 8,395,218'Gate-all-around type semiconductor device and method of manufacturing the same'2013 8,124,961'Single electron transistor'2012 8,008,141'Method of fabricating a semiconductor device with multiple channels'2011 7,955,932'Single electron transistor and method of manufacturing the same'2011 7,952,151'Semiconductor devices including fin shaped semiconductor regions and stress inducing layers'2011 7,859,064'Semiconductor devices including channel and junction regions of different semiconductor materials'2010 7,803,675'Gate-all-around type semiconductor device and method of manufacturing the same'2010 7,795,687'MOS field effect transistor having plurality of channels'2010 7,781,290'Complementary metal-oxide semiconductor (CMOS) devices including a thin-body channel and dual gate dielectric layers and methods of manufacturing the same'2010 7,588,977'Method of fabricating a MOS field effect transistor having plurality of channels'2009 7,579,657'Semiconductor device with multiple channels'2009 7,271,456'Semiconductor devices including stress inducing layers'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (45)· patent assignee history

2007–2020Based in Seoul, KR· patent location history

2012–2017Patents assigned to SUK SUNG-DAE (6)· patent assignee history

2013Patents assigned to KIM DONG-WON (2)· patent assignee history

2015Patents assigned to OH CHANGWOO (2)· patent assignee history

2015Patents assigned to PARK SUNGIL (2)· patent assignee history

2020–2021Based in Hwaseong-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	45	2007–2021
SUK SUNG-DAEself	6	2012–2017
KIM DONG-WON	2	2013
OH CHANGWOO	2	2015
PARK SUNGIL	2	2015

Locations

Location	Patents	Span
Seoul, KR	43	2007–2020
Hwaseong-si, KR	2	2020–2021