Inventor

Anthony F. J. Levi

Inventor

Summit, NJ, US

Overview

17→

Patents

1987–2008

Patent span

Electricity

Primary field (CPC H)

Patents· 17 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G02Bprimary

G02BOptical elements, systems or apparatus18%

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light15%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein12%

H10DInorganic electric semiconductor devices12%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%

B82YSpecific uses or applications of nanostructures6%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%

B21DWorking or processing of sheet metal or metal tubes, rods or profiles without essentially removing material3%

B26FPerforating3%

G06FElectric digital data processing3%

PatentTitleYear

7,463,998'Adaptive design of nanoscale electronic devices'2008 7,343,770'Stamping system for manufacturing high tolerance parts'2008 7,311,449'High precision optoelectronic components'2007 7,023,243'Current source evaluation sense-amplifier'2006 6,871,025'Direct electrical-to-optical conversion and light modulation in micro whispering-gallery-mode resonators'2005 6,473,218'Light modulation in whispering-gallery-mode resonators'2002 5,768,460'Low skew optical fiber ribbons'1998 5,212,754'Optical laser connector'1993 5,206,524'Heterostructure bipolar transistor'1993 5,148,504'Optical integrated circuit designed to operate by use of photons'1992 5,099,489'Apparatus comprising a quantum well device'1992 5,023,878'Apparatus comprising a quantum well device and method of operating the apparatus'1991 5,012,319'Integrated electronic assembly comprising a transmission line'1991 4,926,221'Bipolar hot electron transistor'1990 4,901,121'Semiconductor device comprising a perforated metal silicide layer'1990 4,829,343'Hot electron transistor'1989 4,707,197'Method of producing a silicide/Si heteroepitaxial structure, and articles produced by the method'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–1990Patents assigned to AMERICAN TELEPHONE & TELEGRAPH (3)· patent assignee history

1987–1993Based in Summit, NJ, US· patent location history

1989Based in Millburn, NJ, US· patent location history

1990–1993Patents assigned to AT & T BELL LAB (7)· patent assignee history

1998–2008Based in Los Angeles, CA, US· patent location history

2002–2005Patents assigned to CALIFORNIA INST OF TECHN (2)· patent assignee history

2002–2008Based in South Pasadena, CA, US· patent location history

2006–2008Patents assigned to UNIV SOUTHERN CALIFORNIA (2)· patent assignee history

2007–2008Patents assigned to NANOPREC PRODUCTS INC (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
AT & T BELL LAB	7	1990–1993
AMERICAN TELEPHONE & TELEGRAPH	3	1987–1990
CALIFORNIA INST OF TECHN	2	2002–2005
NANOPREC PRODUCTS INC	2	2007–2008
UNIV SOUTHERN CALIFORNIA	2	2006–2008

Locations

Location	Patents	Span
Summit, New Jersey, US	9	1987–1993
South Pasadena, California, US	4	2002–2008
Los Angeles, California, US	3	1998–2008
Millburn, New Jersey, US	1	1989