Inventor
Sunjung Kim
Inventor
Suwon-si, KR
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices27%
H01LSemiconductor devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
C23CCoating metallic material6%
H10BElectronic memory devices6%
G11CStatic stores4%
C30BSingle-crystal growth2%
G09GArrangements or circuits for control of indicating devices using static means to present variable information2%
H01JElectric discharge tubes or discharge lamps2%
PatentTitleYear
10,861,695Method of forming a low-k layer and method of forming a semiconductor device202010,847,611Semiconductor device including patterns and layers having different helium concentrations and method of fabricating the same202010,593,801Semiconductor devices and methods of fabricating the same202010,208,401Substrate treating apparatus20199,991,257Semiconductor device having fin active regions and method of fabricating the same20189,899,272'Methods of fabricating semiconductor devices including complementary metal oxide semiconductor transistors'20189,773,908'Semiconductor devices including fin bodies with varied epitaxial layers'20179,728,644'Semiconductor device including field effect transistors'20179,608,114'Semiconductor device including field effect transistors'20179,577,043'Semiconductor device and method for fabricating the same'20179,544,520'Analog signal generation circuit'20179,508,832'Method of fabricating a semiconductor device'20169,129,830'Three-dimensional semiconductor memory devices having double cross point array and methods of fabricating the same'20159,082,368'Semiconductor devices having image sensor and memory device operation modes'20158,283,719'Nonvolatile memory device having a fixed charge layer'20128,105,930'Method of forming dielectric including dysprosium and scandium by atomic layer deposition and integrated circuit device including the dielectric layer'20127,528,416'Vertical structure LED and fabricating method thereof'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2020Based in Suwon-si, KR· patent location history
2012–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (16)· patent assignee history
2012–2020Patents assigned to KIM SUNJUNG (5)· patent assignee history
2012Patents assigned to CHOI HOONSANG (1)· patent assignee history
2012–2017Based in Yongin-si, KR· patent location history
2015Patents assigned to BAEK INGYU (1)· patent assignee history
2015Based in Gyeonggi-do, KR· patent location history
2017Patents assigned to CHOI EUNHYE (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 16 | 2012–2020 |
| KIM SUNJUNGself | 5 | 2012–2020 |
| BAEK INGYU | 1 | 2015 |
| CHOI EUNHYE | 1 | 2017 |
| CHOI HOONSANG | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Suwon-si, KR | 13 | 2009–2020 |
| Yongin-si, KR | 3 | 2012–2017 |
| Gyeonggi-do, KR | 1 | 2015 |