LexDanaLexDanabeta
Inventor

Shiro Sakai

Inventor
Tokushima, JP

Overview

58→
Patents
1976–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 58 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H01LSemiconductor devices7%
H10DInorganic electric semiconductor devices7%
B82YSpecific uses or applications of nanostructures5%
C30BSingle-crystal growth4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
A23LFoods, foodstuffs or non-alcoholic beverages, not otherwise provided for1%
PatentTitleYear
10,128,403Semiconductor substrate, semiconductor device, and manufacturing methods thereof20189,947,717Light-emitting device having light-emitting elements and electrode spaced apart from the light emitting element20189,773,940'Semiconductor substrate, semiconductor device, and manufacturing methods thereof'20179,425,347'Semiconductor substrate, semiconductor device, and manufacturing methods thereof'20169,299,779'Semiconductor substrate and method of fabricating the same'20169,202,685'Method of manufacturing a compound semiconductor substrate in a flattened growth substrate'20159,012,924'Spectrum detector including a photodector having a concavo-convex patten'20159,006,084'Method of preparing semiconductor layer including cavities'20158,957,426'Laminate substrate and method of fabricating the same'20158,860,183'Semiconductor substrate, semiconductor device, and manufacturing methods thereof'20148,735,911'Light emitting device having shared electrodes'20148,735,918'Light-emitting device having light-emitting elements with polygonal shape'20148,697,551'Crystalline aluminum carbide thin film, semiconductor substrate having the aluminum carbide thin film formed thereon and method of fabricating the same'20148,680,533'Light-emitting device having light-emitting elements with a shared electrode'20148,624,291'Crystalline aluminum carbide thin film, semiconductor substrate having the aluminum carbide thin film formed thereon and method of fabricating the same'20148,609,449'Method of fabricating semiconductor substrate and method of fabricating light emitting device'20138,564,134'Semiconductor substrate, semiconductor device, and manufacturing methods thereof'20138,481,411'Method of manufacturing a semiconductor substrate having a cavity'20138,329,488'Method of fabricating semiconductor substrate and method of fabricating light emitting device'20128,319,947'Operating valve, exposure apparatus, and device manufacturing method'20128,294,183'Semiconductor substrate, method of fabricating the same, semiconductor device, and method of fabricating the same'20128,189,635'Laser diode having nano patterns and method of fabricating the same'20128,183,075'Method of fabricating semiconductor substrate and method of fabricating light emitting device'20128,129,729'Light emitting device having light emitting elements and an air bridge line'20128,097,889'Light emitting device having light emitting elements with a shared electrode'20128,084,774'Light emitting device having light emitting elements'20118,039,280'Light emitting diode and method of fabricating the same'20118,026,119'Method of fabricating semiconductor substrate and method of fabricating light emitting device'20117,956,367'Light-emitting device having light-emitting elements connected in series'20117,897,982'Light emitting device having common N-electrode'20117,760,784'Laser diode having nano patterns and method of fabricating the same'20107,700,940'Gallium nitride-based compound semiconductor device'20107,667,237'Light emitting device having light emitting elements'20107,646,031'Light emitting device having light emitting elements'20107,615,793'AC driven light—emitting device'20097,569,861'Light emitting device having light emitting elements'20097,417,259'Light-emitting device having light-emitting elements'20087,372,066'Gallium nitride compound semiconductor device and manufacturing method'20087,067,838'Gallium-nitride-based light-emitting apparatus'20067,015,511'Gallium nitride-based light emitting device and method for manufacturing the same'20067,005,685'Gallium-nitride-based compound semiconductor device'20066,884,647'Method for roughening semiconductor surface'20056,861,270'Method for manufacturing gallium nitride compound semiconductor and light emitting element'20056,666,921'Chemical vapor deposition apparatus and chemical vapor deposition method'20036,610,606'Method for manufacturing nitride compound based semiconductor device using an RIE to clean a GaN-based layer'20036,592,674'Chemical vapor deposition apparatus and chemical vapor deposition method'20036,517,885'Process for preparation of mustard powder and mustard cake'20036,475,882'Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device'20026,436,224'Method for joining polyolefin pipes and treatment for the joining'20026,198,112'III-V compound semiconductor luminescent device'20015,578,891'Electron multiplier'19965,446,275'Electron multiplying device having multiple dynode stages encased by a housing'19954,963,508'Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice'19904,928,154'Epitaxial gallium arsenide semiconductor on silicon substrate with gallium phosphide and superlattice intermediate layers'19904,789,421'Gallium arsenide superlattice crystal grown on silicon substrate and method of growing such crystal'19884,496,598'Process for preparing mustard flour'19853,969,329'Process for producing high molecular weight acrylamide water-soluble polymers by controlling the viscosity of the polymerization reaction medium with a water-miscible organic solvent'19763,931,122'Method for producing high molecular weight polyacrylamide type resins'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1985–2016Patents assigned to SAKAI SHIRO (24)· patent assignee history
1988–1990Based in Nagoya, JP· patent location history
2001–2018Based in Tokushima, JP· patent location history
2002–2008Patents assigned to NITRIDE SEMICONDUCTORS CO LTD (7)· patent assignee history
2003–2012Based in Saitama, JP· patent location history
2003–2005Based in Hachiman-cho, Tokushima-shi, Tokushima 770-8072, JP· patent location history
2005–2011Based in Tokushima-shi, JP· patent location history
2008–2018Patents assigned to SEOUL SEMICONDUCTOR CO LTD (14)· patent assignee history
2010–2014Patents assigned to SEOUL OPTO DEVICE CO LTD (12)· patent assignee history
2014–2018Patents assigned to SEOUL VIOSYS CO LTD (9)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAKAI SHIROself241985–2016
SEOUL SEMICONDUCTOR CO LTD142008–2018
SEOUL OPTO DEVICE CO LTD122010–2014
SEOUL VIOSYS CO LTD92014–2018
NITRIDE SEMICONDUCTORS CO LTD72002–2008
Locations
LocationPatentsSpan
Tokushima, JP432001–2018
Nagoya, JP31988–1990
Saitama, JP22003–2012
Tokushima-shi, JP22005–2011
Hachiman-cho, Tokushima-shi, Tokushima 770-8072, JP22003–2005