Inventor
Hisanori Yokura
Inventor
Obu, JP
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
B81BMicrostructural devices or systems, e.g. micromechanical devices12%
G01PMeasuring linear or angular speed, acceleration, deceleration, or shock12%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems10%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure10%
H01LSemiconductor devices7%
G01CMeasuring distances, levels or bearings6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
G01RMeasuring electric variables4%
H10DInorganic electric semiconductor devices4%
PatentTitleYear
11,054,326Physical quantity sensor202110,468,322Semiconductor device capable of suppressing cracks of through-hole protective film and short circuit of adjacent through-electrodes20199,944,515Manufacturing method of semiconductor device20189,835,507Dynamic quantity sensor20179,664,768'Magnetic sensor'20179,349,644'Semiconductor device producing method'20169,105,753'Semiconductor physical quantity sensor and method for manufacturing the same'20159,024,632'Magnetic sensor with a plurality of heater portions to fix the direction of magnetization of a pinned magnetic layer'20158,785,231'Method of making semiconductor device'20148,497,557'Semiconductor device'20138,413,507'Semiconductor dynamic quantity sensor and method of manufacturing the same'20138,169,082'Semiconductor device and method for manufacturing the same'20128,106,471'Semiconductor dynamic quantity sensor and method of producing the same'20128,089,144'Semiconductor device and method for manufacturing the same'20127,821,085'Physical quantity sensor and method for manufacturing the same'20107,644,623'Semiconductor sensor for measuring a physical quantity and method of manufacturing the same'20107,387,024'Capacitive type humidity sensor'20087,157,781'Enhancement of membrane characteristics in semiconductor device with membrane'20077,154,094'Fabri-Perot filter'20067,071,709'Circuit for detecting capacitance change in variable capacitance'20066,316,300'Method of manufacturing a semiconductor device having an oxidation process for selectively forming an oxide film'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2021Patents assigned to DENSO CORP (21)· patent assignee history
2001–2008Based in Chiryu, JP· patent location history
2010–2016Based in Obu, JP· patent location history
2012–2015Patents assigned to YOKURA HISANORI (6)· patent assignee history
2012–2013Patents assigned to FUJII TETSUO (5)· patent assignee history
2012Patents assigned to YAMANAKA AKITOSHI (2)· patent assignee history
2015Patents assigned to FURUICHI TAKAMOTO (1)· patent assignee history
2015–2017Based in Nagoya, JP· patent location history
2017–2019Based in Kariya, JP· patent location history
2021Based in Kariya-city, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| DENSO CORP | 21 | 2001–2021 |
| YOKURA HISANORIself | 6 | 2012–2015 |
| FUJII TETSUO | 5 | 2012–2013 |
| YAMANAKA AKITOSHI | 2 | 2012 |
| FURUICHI TAKAMOTO | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Obu, JP | 10 | 2010–2016 |
| Chiryu, JP | 5 | 2001–2008 |
| Kariya, JP | 3 | 2017–2019 |
| Nagoya, JP | 2 | 2015–2017 |
| Kariya-city, JP | 1 | 2021 |