Inventor
Kiyoyuki Morita
Inventor
Kyoto, JP
Overview
Patents· 51 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices20%
G11CStatic stores12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10BElectronic memory devices9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
B82YSpecific uses or applications of nanostructures5%
H10NElectric solid-state devices not otherwise provided for4%
B08BCleaning in general2%
C04BLime, magnesia2%
PatentTitleYear
11,012,630Image processor and image processing method202110,882,454Display system, electronic mirror system, and moving body2021RE048032Thin-film semiconductor substrate, light-emitting panel, and method of manufacturing the thin-film semiconductor substrate20209,147,722'Thin-film semiconductor substrate, light-emitting panel, and method of manufacturing the thin-film semiconductor substrate'20157,821,138'Semiconductor device with an improved operating property'20107,507,297'Cleaning method and cleaning apparatus'20097,493,353'Stochastic processor, driving method thereof, and recognition process device using the same'20097,394,090'Non-volatile memory and the fabrication method'20087,291,857'Non-volatile memory'20077,232,703'Non-volatile memory and the fabrication method'20077,220,482'Aligned fine particles, method for producing the same and device using the same'20077,053,693'Voltage generating circuit, voltage generating device and semiconductor device using the same, and driving method thereof'20067,022,530'Semiconductor device and method for fabricating the same'20066,949,780'Semiconductor device'20056,940,740'Multilevel semiconductor memory device and method for driving the same as a neuron element in a neural network computer'20056,933,570'Semiconductor device equipped with fuel cell and method for producing the same'20056,911,351'Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same'20056,859,381'Semiconductor device and method for driving the same'20056,847,543'Non-volatile memory circuit, a method for driving the same, and a semiconductor device using the memory circuit'20056,847,071'Semiconductor device'20056,844,582'Semiconductor device and learning method thereof'20056,844,564'Non-volatile memory'20056,809,953'Potential generating circuit, potential generating device and semiconductor device using the same, and driving method thereof'20046,781,865'Nonvolatile selector, and integrated circuit device'20046,740,928'Semiconductor device'20046,720,596'Semiconductor device and method for driving the same'20046,720,586'Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same'20046,716,663'Method for removing foreign matter, method for forming film, semiconductor device and film forming apparatus'20046,713,316'Method for removing foreign matter, method for forming film, semiconductor device and film forming apparatus'20046,689,311'Method and apparatus for manufacturing sinter, method for measuring concentration of plasticizer, evaluation method, and evaluation apparatus'20046,548,825'Semiconductor device including barrier layer having dispersed particles'20036,541,278'Method of forming film for semiconductor device with supercritical fluid'20036,538,297'Magneto-resistive device and magneto-resistive effect type storage device'20036,503,360'Etching method and apparatus'20036,475,403'Etching method and apparatus'20026,342,716'Semiconductor device having dot elements as floating gate'20026,303,516'Method for forming dot element'20016,171,905'Semiconductor device and method of manufacturing the same'20016,103,583'Method for producing quantization functional device'20006,091,077'MIS SOI semiconductor device with RTD and/or HET'20006,015,978'Resonance tunnel device'20005,972,744'Quantum effect device, method of manufacturing the same'19995,945,687'Quantization functional device, quantization functional apparatus utilizing the same, and method for producing the same'19995,909,033'Vacuum-sealed field-emission electron source and method of manufacturing the same'19995,888,852'Method for forming semiconductor microstructure, semiconductor device fabricated using this method, method for fabricating resonance tunneling device, and resonance tunnel device fabricated by this method'19995,739,544'Quantization functional device utilizing a resonance tunneling effect and method for producing the same'19985,736,421'Semiconductor device and associated fabrication method'19985,304,515'Method for forming a dielectric thin film or its pattern of high accuracy on substrate'19945,273,914'Method of fabricating a CMOS semiconductor devices'19935,185,296'Method for forming a dielectric thin film or its pattern of high accuracy on a substrate'19935,030,582'Method of fabricating a CMOS semiconductor device'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–2008Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (44)· patent assignee history
1991–2021Based in Osaka, JP· patent location history
1998–2020Based in Kyoto, JP· patent location history
1998–2010Based in Yawata, JP· patent location history
2007–2008Based in Joetsu-shi, JP· patent location history
2009–2020Patents assigned to PANASONIC CORP (5)· patent assignee history
2021Patents assigned to PANASONIC IP MAN CO LTD (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MATSUSHITA ELECTRIC INDUSTRIAL CO LTD | 44 | 1991–2008 |
| PANASONIC CORP | 5 | 2009–2020 |
| PANASONIC IP MAN CO LTD | 2 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyoto, JP | 23 | 1998–2020 |
| Yawata, JP | 20 | 1998–2010 |
| Osaka, JP | 6 | 1991–2021 |
| Joetsu-shi, JP | 2 | 2007–2008 |