Inventor
Daniel A. Inns
Inventor
Palo Alto, CA, US
Overview
Patents· 13 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation21%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution21%
H01LSemiconductor devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
Y02PClimate change mitigation technologies in the production or processing of goods13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
C23CCoating metallic material3%
C30BSingle-crystal growth3%
PatentTitleYear
10,396,229Solar cell with interdigitated back contacts formed from high and low work-function-tuned silicides of the same metal20199,246,029'Method for manufacturing an interdigitated back contact solar cell'20169,059,341'Method for manufacturing an interdigitated back contact solar cell'20159,048,374'Method for manufacturing an interdigitated back contact solar cell'20158,962,459'Diffusion sources from liquid precursors'20158,933,456'Germanium-containing release layer for transfer of a silicon layer to a substrate'20158,895,348'Methods of forming a high efficiency solar cell with a localized back surface field'20148,669,169'Diffusion sources from liquid precursors'20148,653,360'Compositionally-graded band gap heterojunction solar cell'20148,298,923'Germanium-containing release layer for transfer of a silicon layer to a substrate'20127,935,612'Layer transfer using boron-doped SiGe layer'20117,914,619'Thick epitaxial silicon by grain reorientation annealing and applications thereof'20117,749,869'Crystalline silicon substrates with improved minority carrier lifetime including a method of annealing and removing SiOx precipitates and getterning sites'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2019Patents assigned to IBM (6)· patent assignee history
2010–2011Based in White Plains, NY, US· patent location history
2011Based in Chester Hill, AU· patent location history
2012–2019Patents assigned to INNS DANIEL A (4)· patent assignee history
2012–2019Patents assigned to SADANA DEVENDRA K (4)· patent assignee history
2012–2015Patents assigned to BEDELL STEPHEN W (3)· patent assignee history
2012–2016Based in Palo Alto, CA, US· patent location history
2014–2019Based in Sunnyvale, CA, US· patent location history
2015–2016Patents assigned to DU PONT (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 6 | 2010–2019 |
| INNS DANIEL Aself | 4 | 2012–2019 |
| SADANA DEVENDRA K | 4 | 2012–2019 |
| BEDELL STEPHEN W | 3 | 2012–2015 |
| DU PONT | 3 | 2015–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Palo Alto, California, US | 8 | 2012–2016 |
| Sunnyvale, California, US | 2 | 2014–2019 |
| White Plains, New York, US | 2 | 2010–2011 |
| Chester Hill, AU | 1 | 2011 |