LexDanaLexDanabeta
Inventor

Ryu Hirota

Inventor
Itami, JP

Overview

37→
Patents
1999–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 37 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth38%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light5%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
Y10TTechnical subjects covered by former us classification5%
C23CCoating metallic material3%
H01LSemiconductor devices2%
H10DInorganic electric semiconductor devices2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
A47FSpecial furniture, fittings, or accessories for shops, storehouses, bars, restaurants or the like1%
PatentTitleYear
10,837,124Gallium nitride substrate202010,458,043Gallium nitride substrate201910,443,151Gallium nitride substrate201910,006,147Gallium nitride substrate20188,404,569'Fabrication method and fabrication apparatus of group III nitride crystal substance'20138,310,030'III-nitride crystal substrate and III-nitride semiconductor device'20128,304,334'III-V compound crystal and semiconductor electronic circuit element'20128,198,177'AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing same'20128,134,223'III-V compound crystal and semiconductor electronic circuit element'20128,067,300'AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same'20118,038,794'Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device'20118,002,892'Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device'20117,998,847'III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device'20117,905,958'Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device'20117,892,513'Group III nitride crystal and method of its growth'20117,858,502'Fabrication method and fabrication apparatus of group III nitride crystal substance'20107,794,543'Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate'20107,772,585'Nitride semiconductor substrate and method of producing same'20107,771,532'Nitride semiconductor substrate and method of producing same'20107,655,960'A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same'20107,589,000'Fabrication method and fabrication apparatus of group III nitride crystal substance'20097,534,310'Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate'20097,485,484'Group III-V crystal'20097,473,315'AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate'20097,354,477'Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate'20087,303,630'Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate'20077,297,625'Group III-V crystal and manufacturing method thereof'20077,288,151'Method of manufacturing group-III nitride crystal'20077,129,525'Semiconductor light-emitting device'20067,112,826'Single crystal GaN substrate semiconductor device'20067,105,865'AlxInyGa1−x−yN mixture crystal substrate'20067,087,114'Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate'20066,667,184'Single crystal GaN substrate, method of growing same and method of producing same'20036,475,277'Group III-V nitride semiconductor growth method and vapor phase growth apparatus'20026,132,506'Method for the heat treatment of ZnSe crystal'20005,944,891'Method for the heat treatment of ZnSe crystal'19995,933,751'Method for the heat treatment of II-VI semiconductors'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2020Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (36)· patent assignee history
1999–2002Based in Osaka, JP· patent location history
2003–2012Based in Hyogo, JP· patent location history
2006–2020Based in Itami, JP· patent location history
2011–2013Patents assigned to HIROTA RYU (6)· patent assignee history
2011–2013Patents assigned to NAKAHATA SEIJI (5)· patent assignee history
2011–2013Patents assigned to MOTOKI KENSAKU (3)· patent assignee history
2012–2013Patents assigned to UEMATSU KOJI (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO ELECTRIC INDUSTRIES361999–2020
HIROTA RYUself62011–2013
NAKAHATA SEIJI52011–2013
UEMATSU KOJI42012–2013
MOTOKI KENSAKU32011–2013
Locations
LocationPatentsSpan
Itami, JP202006–2020
Hyogo, JP132003–2012
Osaka, JP41999–2002