Inventor
Randall S. Geels
Inventor
San Diego, CA, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light24%
B82YSpecific uses or applications of nanostructures18%
G01BMeasuring length, thickness or similar linear dimensions18%
G01NInvestigating or analysing materials by determining their chemical or physical properties13%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light11%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
B24BMachines, devices, or processes for grinding or polishing3%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
11,099,068Optical instrumentation including a spatially variable filter202110,240,981Optical spectrometer configuration including spatially variable filter (SVF)20198,908,177'Correction of second-order diffraction effects in fiber-optic-based spectrometers'20147,502,119'Thin-film metrology using spectral reflectance with an intermediate in-line reference'20097,151,609'Determining wafer orientation in spectral imaging'20067,095,511'Method and apparatus for high-speed thickness mapping of patterned thin films'20066,307,873'Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam'20016,272,162'Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam'20016,184,985'Spectrometer configured to provide simultaneous multiple intensity spectra from independent light sources'20016,181,721'Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam'20016,172,756'Rapid and accurate end point detection in a noisy environment'20016,148,014'Visible wavelength semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam'20006,148,013'Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam'2000RE036802'Transverse electric (TE) polarization mode AlGaInP/GaAs red laser diodes, especially with self-pulsating operation'20005,933,705'Passivation and protection of semiconductor surface'19995,850,411'Transverse electric (TE) polarization mode AlGaInP/GaAs red laser diodes, especially with self-pulsating operation'19985,799,028'Passivation and protection of a semiconductor surface'19985,654,229'Method for replicating periodic nonlinear coefficient patterning during and after growth of epitaxial ferroelectric oxide films'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2001Based in San Jose, CA, US· patent location history
1998–2001Patents assigned to SDL INC (8)· patent assignee history
2000–2021Based in San Diego, CA, US· patent location history
2001–2021Patents assigned to FILMETRICS INC (8)· patent assignee history
2001Patents assigned to JDS UNIPHASE CORP (1)· patent assignee history
2019Patents assigned to CHALMERS SCOTT A (1)· patent assignee history
2019Patents assigned to GEELS RANDALL S (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FILMETRICS INC | 8 | 2001–2021 |
| SDL INC | 8 | 1998–2001 |
| CHALMERS SCOTT A | 1 | 2019 |
| GEELS RANDALL Sself | 1 | 2019 |
| JDS UNIPHASE CORP | 1 | 2001 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Diego, California, US | 9 | 2000–2021 |
| San Jose, California, US | 9 | 1997–2001 |