Inventor
Arnon Gat
Inventor
Palo Alto, CA, US
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1044%
F27BFurnaces, kilns, ovens or retorts in general13%
F27DDetails or accessories of furnaces, kilns, ovens or retorts, in so far as they are of kinds occurring in more than one kind of furnace13%
C30BSingle-crystal growth10%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light10%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
G11CStatic stores3%
H10DInorganic electric semiconductor devices3%
PatentTitleYear
8,138,451'Heating device for heating semiconductor wafers in thermal processing chambers'20127,608,802'Heating device for heating semiconductor wafers in thermal processing chambers'20097,226,488'Fast heating and cooling apparatus for semiconductor wafers'20077,038,174'Heating device for heating semiconductor wafers in thermal processing chambers'20066,919,271'Method for rapidly heating and cooling semiconductor wafers'20056,771,895'Heating device for heating semiconductor wafers in thermal processing chambers'20046,727,474'Rapid thermal processing chamber for processing multiple wafers'20046,717,158'Heating device for heating semiconductor wafers in thermal processing chambers'20046,610,967'Rapid thermal processing chamber for processing multiple wafers'20036,403,923'System for controlling the temperature of a reflective substrate during rapid heating'20026,359,263'System for controlling the temperature of a reflective substrate during rapid heating'20026,310,328'Rapid thermal processing chamber for processing multiple wafers'20015,970,214'Heating device for semiconductor wafers'19995,960,158'Apparatus and method for filtering light in a thermal processing chamber'19995,874,711'Apparatus and method for determining the temperature of a radiating surface'19995,165,796'Bichannel radiation detection apparatus'19925,114,242'Bichannel radiation detection method'19924,356,384'Method and means for heat treating semiconductor material using high intensity CW lamps'19824,331,485'Method for heat treating semiconductor material using high intensity CW lamps'19824,233,671'Read only memory and integrated circuit and method of programming by laser means'19804,214,918'Method of forming polycrystalline semiconductor interconnections, resistors and contacts by applying radiation beam'1980Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1980–2012Based in Palo Alto, CA, US· patent location history
1980Based in Stanford, CA, US· patent location history
1982–2012Patents assigned to GAT ARNON (3)· patent assignee history
1992Patents assigned to PROCESSING TECHNOLOGIES INC AG (2)· patent assignee history
1999Patents assigned to ASSOCIATES AG (3)· patent assignee history
2002–2012Patents assigned to MATTSON TECH INC (10)· patent assignee history
2012Patents assigned to BOGART BOB (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MATTSON TECH INC | 10 | 2002–2012 |
| ASSOCIATES AG | 3 | 1999 |
| GAT ARNONself | 3 | 1982–2012 |
| PROCESSING TECHNOLOGIES INC AG | 2 | 1992 |
| BOGART BOB | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Palo Alto, California, US | 20 | 1980–2012 |
| Stanford, California, US | 1 | 1980 |