LexDanaLexDanabeta
Inventor

Yoshitaka Hamada

Inventor
Joetsu-shi, JP

Overview

44→
Patents
1988–2015
Patent span
Chemistry
Primary field (CPC C)

Patents· 44 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds12%
C09DCoating compositions, e.g. paints, varnishes or lacquers9%
Y10TTechnical subjects covered by former us classification8%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients4%
C23CCoating metallic material4%
H05KPrinted circuits4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
PatentTitleYear
9,018,095'Formation of conductive circuit, conductive circuit, and conductive ink composition'20158,604,126'Silicone resin composition and optical material'20138,546,597'Organic silane compound for forming Si-containing film by plasma CVD and method for forming Si-containing film'20138,537,808'SIP telephone set, and file transfer system, file transfer method and file transfer program thereof'20138,461,367'Preparation process of trisilylamine'20138,434,637'Packaging bag'20138,277,600'High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device'20128,257,528'Substrate joining method and 3-D semiconductor device'20128,153,836'Silsesquioxane compound mixture, hydrolyzable silane compound, making methods, resist composition, patterning process, and substrate processing'20127,981,815'Semiconductor device producing method and substrate processing apparatus'20117,923,522'Process for preparing a dispersion liquid of zeolite fine particles'20117,786,022'Method for forming insulating film with low dielectric constant'20107,754,330'Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device'20107,745,094'Resist composition and patterning process using the same'20107,651,829'Positive resist material and pattern formation method using the same'20107,638,256'Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process'20097,550,247'Resist composition and patterning process'20097,541,134'Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same'20097,485,690'Sacrificial film-forming composition, patterning process, sacrificial film and removal method'20097,417,104'Porous film-forming composition, patterning process, and porous sacrificial film'20087,402,621'Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device'20087,385,021'Sacrificial film-forming composition, patterning process, sacrificial film and removal method'20087,357,961'Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device'20087,341,775'Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device'20087,332,446'Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device'20087,265,234'Silsesquioxane compound mixture, method of making, resist composition, and patterning process'20077,239,018'Composition for forming a porous film prepared by hydrolysis and condensation of an alkoxysilane using a trialkylmethylammonium hydroxide catalyst'20077,132,473'Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device'20067,126,208'Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device'20067,119,354'Composition for forming porous film, porous film and method for forming the same, interlevel insulator film'20067,084,505'Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor device'20066,930,393'Composition for forming porous film, porous film and method for forming the same, interlayer insulator film, and semiconductor device'20056,680,081'Conductive powder and making process'20046,485,831'Conductive powder and making process'20026,114,500'Purification of organic silicon polymer'20005,955,192'Conductive circuit board and method for making'19995,670,259'Water soluble pyrolytic paint'19975,554,710'Conductive polymers and process for preparing the same'19965,113,002'Polysilane copolymers and method for preparing same'19924,981,988'Organosiloxane compound with one end stopped with an aminoalkyl group and a manufacturing method thereof'19914,950,726'Organopolysiloxane compound having liquid-crystalline phase'19904,794,243'Integrated circuit card with increased number of connecting terminals'19884,780,603'Integrated circuit card and connector arrangement using same'19884,766,480'Integrated circuit card having memory errasable with ultraviolet ray'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988Patents assigned to MIPS CO LTD (3)· patent assignee history
1988–1997Based in Kawasaki, JP· patent location history
1990–2015Patents assigned to SHINETSU CHEMICAL CO (30)· patent assignee history
1991–1996Based in Annaka, JP· patent location history
2005–2010Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (10)· patent assignee history
2005–2010Based in Niigata, JP· patent location history
2007–2015Based in Joetsu-shi, JP· patent location history
2012–2013Patents assigned to HAMADA YOSHITAKA (8)· patent assignee history
2012Patents assigned to ASANO TAKESHI (2)· patent assignee history
2013Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHINETSU CHEMICAL CO301990–2015
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD102005–2010
HAMADA YOSHITAKAself82012–2013
MIPS CO LTD31988
ASANO TAKESHI22012
Locations
LocationPatentsSpan
Joetsu-shi, JP182007–2015
Niigata, JP112005–2010
Kawasaki, JP41988–1997
Annaka, JP31991–1996
Tokyo, JP22013