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Inventor

SHENQING FANG

Inventor
US

Overview

4→
Patents
2022–2025
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices33%
H10DInorganic electric semiconductor devices33%
H10BElectronic memory devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
PatentTitleYear
12,237,387Method of spacer formation with straight sidewall of memory cells202511,450,680Split gate charge trapping memory cells having different select gate and memory gate heights202211,342,429Memory first process flow and device202211,257,675Tilted implant for poly resistors2022

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2022–2025Patents assigned to CYPRESS SEMICONDUCTOR CORP (4)· patent assignee history
2022–2025Patents assigned to Infineon Technologies LLC (2)· patent assignee history
2022–2025Based in US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CYPRESS SEMICONDUCTOR CORP42022–2025
Infineon Technologies LLC22022–2025
Locations
LocationPatentsSpan
US42022–2025