Inventor
HUI-HSIEN WEI
Inventor
TW
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices23%
H10NElectric solid-state devices not otherwise provided for20%
H01LSemiconductor devices15%
H10DInorganic electric semiconductor devices14%
G11CStatic stores8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
B82YSpecific uses or applications of nanostructures5%
H01FMagnets3%
PatentTitleYear
12,563,742Multi-gate selector switches for memory cells and methods of forming the same202612,507,419Memory cell device with thin-film transistor selector and methods for forming the same202512,349,368Memory device including a semiconducting metal oxide fin transistor and methods of forming the same202512,336,187Mobility enhancement by source and drain stress layer or implantation in thin film transistors202512,315,762Self-aligned lines and methods for fabricating the same202512,317,751Integrated circuit202512,219,778Multi-gate selector switches for memory cells and methods of forming the same202512,219,780High-density memory device with planar thin film transistor (TFT) selector and methods for making the same202512,219,880Integrated circuit device202512,178,051Magnetic random access memory and manufacturing method thereof202412,127,489Integrated circuit structure202412,125,921Semiconducting metal oxide transistors having a patterned gate and methods for forming the same202412,114,511Semiconductor device, integrated circuit and method of manufacturing the same202412,074,219Back channel field effect transistors using a pull back process and methods for forming the same202412,069,958Semiconductor device202412,058,873Memory device including a semiconducting metal oxide fin transistor and methods of forming the same202411,968,840Tri-gate transistor and methods for forming the same202411,968,908Magnetic tunnel junction device202411,825,661Mobility enhancement by source and drain stress layer of implantation in thin film transistors202311,805,658Magnetic random access memory and manufacturing method thereof202311,800,812Integrated circuit202311,757,047Semiconducting metal oxide transistors having a patterned gate and methods for forming the same202311,737,288High-density memory device with planar thin film transistor (TFT) selector and methods for making the same202311,683,988Semiconductor device202311,588,107Integrated circuit structure202311,581,366Memory cell device with thin-film transistor selector and methods for forming the same202311,387,406Magnetic of forming magnetic tunnel junction device using protective mask202211,271,150Integrated circuit202211,189,658Magnetic random access memory and manufacturing method thereof2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (29)· patent assignee history
2021–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 29 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 29 | 2021–2026 |