Inventor
Robert W. Wu
Inventor
Pleasanton, CA, US
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1034%
H01JElectric discharge tubes or discharge lamps28%
C23CCoating metallic material11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
H01FMagnets4%
H02NElectric machines not otherwise provided for4%
H05HPlasma technique4%
Y10TTechnical subjects covered by former us classification4%
PatentTitleYear
7,992,518'Silicon carbide gas distribution plate and RF electrode for plasma etch chamber'20116,800,213'Precision dielectric etch using hexafluorobutadiene'20046,776,873'Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers'20046,513,452'Adjusting DC bias voltage in plasma chamber'20036,454,898'Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners'20026,432,318'Dielectric etch process reducing striations and maintaining critical dimensions'20026,379,574'Integrated post-etch treatment for a dielectric etch process'20026,361,705'Plasma process for selectively etching oxide using fluoropropane or fluoropropylene'20026,308,654'Inductively coupled parallel-plate plasma reactor with a conical dome'20016,221,782'Adjusting DC bias voltage in plasma chamber'20016,183,655'Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon'20016,074,959'Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide'20006,074,512'Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners'20006,009,830'Independent gas feeds in a plasma reactor'20005,986,875'Puncture resistant electrostatic chuck'19995,965,463'Silane etching process'19995,910,221'Bonded silicon carbide parts in a plasma reactor'19995,904,778'Silicon carbide composite article particularly useful for plasma reactors'19995,891,350'Adjusting DC bias voltage in plasma chambers'19995,865,937'Broad-band adjustable power ratio phase-inverting plasma reactor'19995,729,423'Puncture resistant electrostatic chuck'19985,607,542'Inductively enhanced reactive ion etching'19975,605,637'Adjustable dc bias control in a plasma reactor'19975,585,012'Self-cleaning polymer-free top electrode for parallel electrode etch operation'19965,560,780'Protective coating for dielectric material on wafer support used in integrated circuit processing apparatus and method of forming same'19965,514,247'Process for plasma etching of vias'19965,176,790'Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal'19935,110,712'Incorporation of dielectric layers in a semiconductor'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992Patents assigned to HEWLETT PACKARD CO (1)· patent assignee history
1992Based in Fort Collins, CO, US· patent location history
1993–2003Patents assigned to APPLIED MATERIALS INC (24)· patent assignee history
1993–2004Based in Pleasanton, CA, US· patent location history
2011Patents assigned to ADVANCED MICRO FAB EQUIP INC (1)· patent assignee history
2011Based in San Diego, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 24 | 1993–2003 |
| ADVANCED MICRO FAB EQUIP INC | 1 | 2011 |
| HEWLETT PACKARD CO | 1 | 1992 |
Locations
| Location | Patents | Span |
|---|---|---|
| Pleasanton, California, US | 26 | 1993–2004 |
| San Diego, California, US | 1 | 2011 |
| Fort Collins, CO, US | 1 | 1992 |