Inventor
Tetsuro Asano
Inventor
Oizumi-machi, JP
Overview
Patents· 43 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices43%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1027%
H03KPulse technique15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
A01KAnimal husbandry1%
B82YSpecific uses or applications of nanostructures1%
H01LSemiconductor devices1%
H01PWaveguides1%
H01RElectrically-conductive connections1%
H04BTransmission1%
PatentTitleYear
9,735,142'Method of forming a protecting element comprising a first high concentration impurity region separated by an insulating region of a substrate'20178,742,506'Protecting element having first and second high concentration impurity regions separated by insulating region'20148,450,805'Compound semiconductor switch circuit device'20137,732,868'Semiconductor device'20107,701,032'Compound semiconductor device'20107,538,394'Compound semiconductor switch circuit device'20097,514,727'Active element and switching circuit device'20097,498,616'Compound semiconductor switch circuit device'20097,358,788'Compound semiconductor switching circuit device'20087,339,210'Compound semiconductor switching circuit device'20087,294,900'Compound semiconductor device and manufacturing method thereof'20077,262,470'Semiconductor device'20077,206,552'Semiconductor switching device'20077,199,407'Semiconductor device'20077,193,255'Semiconductor device with floating conducting region placed between device elements'20077,173,291'Vertical protecting element formed in semiconductor substrate and semiconductor device using the same'20077,005,688'Semiconductor device with impurity layer to prevent depletion layer expansion'20066,946,891'Switching circuit device'20056,914,280'Switching circuit device'20056,903,426'Semiconductor switching device'20056,897,126'Semiconductor device manufacturing method using mask slanting from orientation flat'20056,894,371'Semiconductor device'20056,891,267'Semiconductor switching circuit device'20056,882,210'Semiconductor switching device'20056,873,828'Compound semiconductor switching device for high frequency switching'20056,867,115'Compound semiconductor device'20056,853,072'Semiconductor switching circuit device and manufacturing method thereof'20056,833,608'Semiconductor device and packaging system therefore'20046,833,616'Multilayer wiring board with mounting pad'20046,818,969'Semiconductor device'20046,787,871'Integrated schottky barrier diode and manufacturing method thereof'20046,777,277'Manufacturing method of Schottky barrier diode'20046,737,890'Switching circuit device'20046,727,559'Compound semiconductor device'20046,682,968'Manufacturing method of Schottky barrier diode'20046,657,266'Semiconductor switching device'20036,627,956'Semiconductor switching device'20036,627,967'Schottky barrier diode'20036,580,107'Compound semiconductor device with depletion layer stop region'20036,573,529'Semiconductor switching device'20035,929,468'Compound semiconductor device'19995,837,570'Heterostructure semiconductor device and method of fabricating same'19984,694,320'Semiconductor integrated circuit having multiple-layered connection'1987Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1987–2010Patents assigned to SANYO ELECTRIC CO (40)· patent assignee history
1987–2013Based in Gunma, JP· patent location history
1998–2017Based in Ora-gun, JP· patent location history
1999Based in Osaka, JP· patent location history
2003–2007Based in Oizumi-machi, JP· patent location history
2013–2014Patents assigned to ASANO TETSURO (2)· patent assignee history
2013–2014Patents assigned to SAKAKIBARA MIKITO (2)· patent assignee history
2013–2014Patents assigned to SEMICONDUCTOR COMPONENTS IND (2)· patent assignee history
2014Patents assigned to HIRAI TOSHIKAZU (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SANYO ELECTRIC CO | 40 | 1987–2010 |
| ASANO TETSUROself | 2 | 2013–2014 |
| SAKAKIBARA MIKITO | 2 | 2013–2014 |
| SEMICONDUCTOR COMPONENTS IND | 2 | 2013–2014 |
| HIRAI TOSHIKAZU | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Oizumi-machi, JP | 15 | 2003–2007 |
| Ora-gun, JP | 14 | 1998–2017 |
| Gunma, JP | 13 | 1987–2013 |
| Osaka, JP | 1 | 1999 |