LexDanaLexDanabeta
Inventor

Yasuhiro Shimamoto

Inventor
Tokorozawa, JP

Overview

48→
Patents
2002–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 48 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices37%
H10BElectronic memory devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
G11CStatic stores9%
H01LSemiconductor devices7%
C23CCoating metallic material3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
B82YSpecific uses or applications of nanostructures1%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
9,673,339'Semiconductor storage device and manufacturing method thereof'20179,318,558'MOS field effect transistor'20169,312,385'Semiconductor device and manufacturing method of semiconductor device'20169,214,516'Field effect silicon carbide transistor'20159,117,849'Nonvolatile semiconductor device and method of manufacturing the same'20159,117,836'Silicon carbide semiconductor device and manufacturing method thereof'20159,029,979'4h-SiC semiconductor element and semiconductor device'20159,000,448'Silicon carbide semiconductor device'20158,823,110'Semiconductor device and manufacturing method of the same'20148,816,426'Semiconductor storage device and manufacturing method thereof'20148,796,756'Nonvolatile semiconductor device and method of manufacturing the same'20148,501,558'Semiconductor device and manufacturing method of the same'20138,409,949'Non-volatile semiconductor memory device and method of manufacturing the same'20138,410,543'Semiconductor storage device and manufacturing method thereof'20138,390,053'Nonvolatile semiconductor device including a field effect transistor having a charge storage layer of predetermined length'20138,385,124'Semiconductor device and manufacturing method thereof'20138,319,274'Semiconductor device'20128,125,012'Non-volatile memory device with a silicon nitride charge holding film having an excess of silicon'20128,063,433'Nonvolatile semiconductor memory device'20117,935,597'Semiconductor device and manufacturing method of the same'20117,915,686'Semiconductor device and manufacturing of the same'20117,915,666'Nonvolatile semiconductor memory devices with charge injection corner'20117,872,298'Split-gate type memory device'20117,759,720'Non-volatile semiconductor memory device and method of manufacturing the same'20107,709,315'Semiconductor device and method of manufacturing the same'20107,687,845'Nonvolatile semiconductor storage device having an element formation region and a plurality of element isolation regions and manufacturing method of the same'20107,432,216'Semiconductor device and manufacturing method thereof'20087,259,058'Fabricating method of semiconductor integrated circuits'20077,256,437'Semiconductor storage device which includes a hydrogen diffusion inhibiting layer'20077,119,407'Semiconductor device and manufacturing method thereof'20067,112,833'Semiconductor device and manufacturing method thereof'20066,992,022'Fabrication method for semiconductor integrated devices'20066,989,304'Method for manufacturing a ruthenium film for a semiconductor device'20066,818,523'Semiconductor storage device manufacturing method which forms a hydrogen diffusion inhibiting layer'20046,787,451'Semiconductor device and manufacturing method thereof'20046,743,739'Fabrication method for semiconductor integrated devices'20046,740,901'Production of semiconductor integrated circuit'20046,693,792'Semiconductor integrated circuits and fabricating method thereof'20046,635,913'Semiconductor storage device'20036,583,023'Method for making semiconductor integrated circuits'20036,555,429'Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device'20036,521,494'Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device'20036,509,246'Production of semiconductor integrated circuit'20036,503,791'Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device'20036,483,143'Semiconductor device having a capacitor structure including a self-alignment deposition preventing film'20026,462,368'Ferroelectric capacitor with a self-aligned diffusion barrier'20026,380,574'Ferroelectric capacitor with a self-aligned diffusion barrier'20026,342,712'Semiconductor storage device with ferrielectric capacitor and metal-oxide isolation'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2016Patents assigned to HITACHI LTD (20)· patent assignee history
2002–2007Based in Hachioji, JP· patent location history
2003–2007Based in Kokubunji, JP· patent location history
2004–2010Patents assigned to RENESAS TECH CORP (10)· patent assignee history
2006–2008Based in Leuven, BE· patent location history
2010–2017Based in Tokorozawa, JP· patent location history
2011–2017Patents assigned to RENESAS ELECTRONICS CORP (17)· patent assignee history
2011–2016Patents assigned to SHIMAMOTO YASUHIRO (14)· patent assignee history
2011–2016Patents assigned to MINE TOSHIYUKI (7)· patent assignee history
2015–2016Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD202002–2016
RENESAS ELECTRONICS CORP172011–2017
SHIMAMOTO YASUHIROself142011–2016
RENESAS TECH CORP102004–2010
MINE TOSHIYUKI72011–2016
Locations
LocationPatentsSpan
Tokorozawa, JP232010–2017
Hachioji, JP162002–2007
Tokyo, JP32015–2016
Kokubunji, JP32003–2007
Leuven, BE22006–2008