Inventor
Keiichiro Asai
Inventor
Nagoya, JP
Overview
Patents· 33 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
C30BSingle-crystal growth18%
G02BOptical elements, systems or apparatus11%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
Y10TTechnical subjects covered by former us classification7%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light6%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein5%
C23CCoating metallic material4%
H10DInorganic electric semiconductor devices4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
PatentTitleYear
10,859,747Phosphor element and illumination device202010,746,926Optical waveguide substrate202010,720,746Optical element and method for manufacturing optical element202010,720,566Bonding method202010,564,513Optical waveguide devices202010,393,931Grating element201910,284,169Bonded bodies and acoustic wave devices201910,074,962Grating element and external resonator type light emitting device20189,874,694Production method for mounting structure for grating elements20189,859,684'Grating element and external-resonator-type light emitting device'20189,733,546'Optical component'20179,298,025'Electrode structure for an optical waveguide substrate'20168,917,443'Wavelength converting devices'20147,687,824'Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device'20107,438,761'Apparatus for fabricating a III-V nitride film and a method for fabricating the same'20087,067,847'Semiconductor element'20067,033,439'Apparatus for fabricating a III-V nitride film and a method for fabricating the same'20066,989,202'Method for fabricating a III nitride film, an underlayer for fabricating a III nitride film and a method for fabricating the same underlayer'20066,869,702'Substrate for epitaxial growth'20056,844,611'III nitride epitaxial substrate, epitaxial substrate for III nitride element, and III nitride element that includes a surface nitride layer formed on the main surface of a sapphire single crystal'20056,805,982'Epitaxial substrates and semiconductor devices'20046,770,914'III nitride semiconductor substrate for ELO'20046,765,244'III nitride film and a III nitride multilayer'20046,727,164'Method for fabricating a semiconducting nitride film, susceptor tray, and apparatus for fabricating a semiconducting nitride film'20046,706,620'Method for fabricating a nitride film'20046,703,649'Semiconductor element'20046,703,255'Method for fabricating a III nitride film'20046,649,493'Method for fabricating a III nitride film, and underlayer for fabricating a III nitride film and a method for fabricating the same underlayer'20036,597,023'Semiconductor light-detecting element'20036,554,896'Epitaxial growth substrate and a method for producing the same'20036,495,894'Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate'20026,492,191'Method for manufacturing an A1xGayInzN film using a metal film for heat radiation'20026,426,519'Epitaxial growth substrate and a method for producing the same'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2020Patents assigned to NGK INSULATORS LTD (33)· patent assignee history
2002–2020Based in Nagoya, JP· patent location history
2005Based in Aichi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NGK INSULATORS LTD | 33 | 2002–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Nagoya, JP | 32 | 2002–2020 |
| Aichi, JP | 1 | 2005 |