Inventor

Henry Kressel

Inventor

Elizabeth, NJ, US

Overview

23→

Patents

1976–1983

Patent span

Electricity

Primary field (CPC H)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary

H10HInorganic light-emitting semiconductor devices having potential barriers20%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests14%

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light11%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation9%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution9%

C23CCoating metallic material5%

C30BSingle-crystal growth5%

G11CStatic stores5%

H10DInorganic electric semiconductor devices5%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%

PatentTitleYear

4,422,161'Memory array with redundant elements'1983 4,328,508'III-V Quaternary alloy photodiode'1982 4,241,423'Optical memory with injection laser as light source and detector'1980 4,233,614'Light emitting diode'1980 4,233,090'Method of making a laser diode'1980 4,195,269'Two-way single fiber optical communication system'1980 4,178,564'Half wave protection layers on injection lasers'1979 4,174,252'Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes'1979 4,131,904'Degradation resistance of semiconductor electroluminescent devices'1978 4,122,410'Lateral mode control in semiconductor lasers'1978 4,097,636'Metallized device'1978 4,095,011'Electroluminescent semiconductor device with passivation layer'1978 4,092,561'Stripe contact providing a uniform current density'1978 4,070,206'Polycrystalline or amorphous semiconductor photovoltaic device having improved collection efficiency'1978 4,024,569'Semiconductor ohmic contact'1977 4,023,062'Low beam divergence light emitting diode'1977 4,005,451'Lateral current device'1977 3,991,339'Light emitting diode with reflector'1976 3,990,101'Solar cell device having two heterojunctions'1976 3,988,167'Solar cell device having improved efficiency'1976 3,974,514'Electroluminescent edge-emitting diode comprising a light reflector in a groove'1976 3,963,536'Method of making electroluminescent semiconductor devices'1976 3,945,902'Metallized device and method of fabrication'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–1983Patents assigned to RCA CORP (23)· patent assignee history

1976–1983Based in Elizabeth, NJ, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
RCA CORP	23	1976–1983

Locations

Location	Patents	Span
Elizabeth, New Jersey, US	23	1976–1983