Inventor
CHUN-YEN PENG
Inventor
TW
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices28%
H01LSemiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
B82YSpecific uses or applications of nanostructures3%
H01GCapacitors3%
H10BElectronic memory devices2%
H10HInorganic light-emitting semiconductor devices having potential barriers1%
PatentTitleYear
12,568,662Semiconductor devices and methods of forming the same202612,453,221Micro LED display device202512,387,935Dipole-engineered high-k gate dielectric and method forming same202512,382,671Semiconductor structure and manufacturing method for the semiconductor structure202512,322,595Semiconductor devices devices including crystallized layer having multiple crystalline orientations and methods of manufacture202512,302,592Metal insulator metal (MIM) structure and manufacturing method thereof202512,300,738Semiconductor device and manufacturing method for the semiconductor device202512,243,932Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices202512,183,581Method of forming a semiconductor device by driving hydrogen into a dielectric layer from another dielectric layer202412,136,659Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices202412,125,706Semiconductor device and method of manufacture202412,033,853Semiconductor devices and methods of manufacture202412,020,941Dipole-engineered high-k gate dielectric and method forming same202411,855,128Metal insulator metal (MIM) structure and manufacturing method thereof202311,848,370Semiconductor device and manufacturing method for the semiconductor device202311,823,894Semiconductor devices and methods of manufacture202311,817,489Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices202311,784,052Dipole-engineered high-k gate dielectric and method forming same202311,776,814Method of forming semiconductor device by driving hydrogen into a dielectric layer from another dielectric layer202311,777,017Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices202311,777,031Semiconductor structure and manufacturing method for the semiconductor structure202311,710,665Semiconductor device and method of manufacture202311,563,079Metal insulator metal (MIM) structure and manufacturing method thereof202311,309,398Semiconductor device and manufacturing method for the semiconductor device202211,264,489Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices202211,257,950Semiconductor structure and manufacturing method for the semiconductor structure2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (25)· patent assignee history
2022–2026Based in TW· patent location history
2025Patents assigned to HON HAI PREC IND CO LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 25 | 2022–2026 |
| HON HAI PREC IND CO LTD | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 26 | 2022–2026 |