Inventor
Tae-Jung Lee
Inventor
Kyungki-do, KR
Overview
Patents· 40 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices17%
H10BElectronic memory devices9%
D01FChemical features in the manufacture of artificial filaments, threads, fibres, bristles or ribbons8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
D02GCrimping or curling fibres, filaments, threads, or yarns6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
Y10TTechnical subjects covered by former us classification6%
C08BPolysaccharides6%
B60CVehicle tyres5%
B29CShaping or joining of plastics3%
PatentTitleYear
11,021,798Water decomposition device and method of manufacturing the same20218,987,797'Nonvolatile memory device and method of forming the same'20158,652,911'Semiconductor device and method of manufacturing the same'20148,587,045'Nonvolatile memory device and method of forming the same'20138,525,273'Integrated circuit devices including device isolation structures and methods of fabricating the same'20138,143,690'Semiconductor device having electrostatic discharge protection circuit and method of manufacturing the same'20128,058,185'Method of fabricating semiconductor integrated circuit device'20118,050,091'EEPROM devices and methods of operating and fabricating the same'20117,732,048'Cellulose multi-filament'20107,713,459'Cellulose fiber for using as industrial materials'20107,593,261'EEPROM devices and methods of operating and fabricating the same'20097,445,992'Method for fabricating cell structure of non-volatile memory device'20087,419,880'Transistor having a protruded drain'20087,378,708'Transistor having a protruded drain'20087,348,241'Cell structure of EPROM device and method for fabricating the same'20087,334,289'Lubricant cleansing apparatus for dry-type wire drawing'20087,330,392'Dual port semiconductor memory device'20087,322,220'Apparatus for manufacturing trapezoidal wire using two-set shaping rollers'20087,304,387'Semiconductor integrated circuit device'20077,214,335'Solution containing cellulose dissolved in N-methylmorpholine-N-oxide and high tenacity lyocell multifilament using the same'20077,214,727'Solution containing cellulose dissolved in N-methylmorpholine-N-oxide and high tenacity lyocell multifilament using the same'20077,207,792'Expansion tube having expansion slits and apparatus for manufacturing heat shrinkable tube having the expansion tube'20077,193,271'Transistor having a protruded drain'20077,120,080'Dual port semiconductor memory device'20067,097,344'Homogeneous cellulose solution and high tenacity lyocell multifilament using the same'20067,053,443'Cell structure of EPROM device and method for fabricating the same'20066,995,447'Silicon on insulator device having trench isolation layer and method for manufacturing the same'20066,995,421'Cell structure of non-volatile memory device and method for fabricating the same'20066,983,779'Cellulose dip cord produced from highly homogeneous cellulose solution and tire using the same'20066,902,804'Lyocell multifilament'20056,885,609'Semiconductor memory device supporting two data ports'20056,852,413'Lyocell multi-filament for tire cord and method of producing the same'20056,812,270'Process of producing highly homogeneous cellulose solution'20046,797,579'Semiconductor device having trench isolation structure and method of fabricating the same'20046,740,933'Semiconductor device having trench isolation structure and method of fabricating the same'20046,737,706'Silicon on insulator device having trench isolation layer and method for manufacturing the same'20046,653,180'Transistors including gate dielectric layers having different nitrogen concentrations and related structures'20036,573,563'SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs'20036,410,375'Methods of forming transistors including gate dielectric layers having different nitrogen concentrations'20024,675,434'Process for producing phthalic acid esters'1987Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2015Patents assigned to SAMSUNG ELECTRONICS CO LTD (25)· patent assignee history
2002–2008Based in Kyungki-do, KR· patent location history
2004–2010Patents assigned to HYOSUNG CORP (9)· patent assignee history
2004–2008Based in Suwon-si, KR· patent location history
2005–2010Based in Kyonggi-do, KR· patent location history
2007–2015Based in Yongin-si, KR· patent location history
2007–2008Based in Gyeonggi-do, KR· patent location history
2011–2014Patents assigned to LEE TAE-JUNG (5)· patent assignee history
2012–2014Patents assigned to BANG KEE-IN (2)· patent assignee history
2012–2013Patents assigned to KIM BYUNG-SUN (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 25 | 2002–2015 |
| HYOSUNG CORP | 9 | 2004–2010 |
| LEE TAE-JUNGself | 5 | 2011–2014 |
| BANG KEE-IN | 2 | 2012–2014 |
| KIM BYUNG-SUN | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyungki-do, KR | 11 | 2002–2008 |
| Yongin-si, KR | 9 | 2007–2015 |
| Kyonggi-do, KR | 7 | 2005–2010 |
| Gyeonggi-do, KR | 5 | 2007–2008 |
| Suwon-si, KR | 3 | 2004–2008 |