Inventor
Takayuki Niuya
Inventor
Plano, TX, US
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
H10DInorganic electric semiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
B08BCleaning in general5%
C11DDetergent compositions5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
C03CChemical composition of glasses, glazes or vitreous enamels2%
C25DProcesses for the electrolytic or electrophoretic production of coatings2%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
PatentTitleYear
6,979,655'Substrate processing method and substrate processing apparatus'20056,946,701'Method for forming a memory integrated circuit with bitlines over gates and capacitors over bitlines'20056,875,288'Cleaning agent and cleaning method'20056,838,370'Method of manufacturing semiconductor device and manufacturing apparatus'20056,835,672'Selective oxidation for semiconductor device fabrication'20046,617,211'Method for forming a memory integrated circuit'20036,607,650'Method of forming a plated layer to a predetermined thickness'20036,514,352'Cleaning method using an oxidizing agent, chelating agent and fluorine compound'20036,478,035'Cleaning device, cleaning system, treating device and cleaning method'20026,468,876'Simple stack cell capacitor formation'20026,277,720'Silicon nitride dopant diffusion barrier in integrated circuits'20016,268,246'Method for fabricating a memory cell'20016,265,309'Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same'20016,214,658'Self-aligned contact structure and method'20016,127,214'Contact gate structure and method'20006,066,545'Birdsbeak encroachment using combination of wet and dry etch for isolation nitride'20005,914,279'Silicon nitride sidewall and top surface layer separating conductors'19995,861,649'Trench-type semiconductor memory device'19995,804,478'Method of forming a trench-type semiconductor memory device'19985,675,533'Semiconductor device'19975,563,433'French-type semiconductor memory device with enhanced trench capacitor-transistor connection'19965,470,777'Method of fabricating random access memory device having sidewall insulating layer on the laminate structure'19955,470,778'Method of manufacturing a semiconductor device'19955,317,177'Semiconductor device and method of manufacturing the same'19945,210,446'Substrate potential generating circuit employing Schottky diodes'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–2005Patents assigned to TEXAS INSTRUMENTS INC (19)· patent assignee history
1993–2005Based in Tsukuba, JP· patent location history
1999–2005Based in Plano, TX, US· patent location history
2001Patents assigned to MITSUBISHI GAS CHEMICALS CO IN (1)· patent assignee history
2001–2005Based in Ibaraki, JP· patent location history
2002–2005Patents assigned to TOKYO ELECTRON LTD (6)· patent assignee history
2002Based in Minato-ku, JP· patent location history
2003–2005Patents assigned to MITSUBISHI GAS CHEMICAL CO (2)· patent assignee history
2003–2005Based in Tokyo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TEXAS INSTRUMENTS INC | 19 | 1993–2005 |
| TOKYO ELECTRON LTD | 6 | 2002–2005 |
| MITSUBISHI GAS CHEMICAL CO | 2 | 2003–2005 |
| MITSUBISHI GAS CHEMICALS CO IN | 1 | 2001 |
Locations
| Location | Patents | Span |
|---|---|---|
| Plano, Texas, US | 10 | 1999–2005 |
| Tsukuba, JP | 9 | 1993–2005 |
| Ibaraki, JP | 3 | 2001–2005 |
| Tokyo, JP | 2 | 2003–2005 |
| Minato-ku, JP | 1 | 2002 |