Inventor
Masahiro Hatakeyama
Inventor
Kanagawa, JP
Overview
Patents· 93 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps31%
G01NInvestigating or analysing materials by determining their chemical or physical properties20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
H05HPlasma technique4%
B82YSpecific uses or applications of nanostructures2%
G01RMeasuring electric variables2%
H01LSemiconductor devices2%
G11BInformation storage based on relative movement between record carrier and transducer2%
PatentTitleYear
10,688,620Polishing apparatus202010,446,404Electron-beam irradiated area adjustment method and adjustment system, electron-beam irradiated region correction method, and electron beam irradiation apparatus201910,157,722Inspection device201810,002,740Inspection device20189,966,227Specimen observation method and device using secondary emission electron and mirror electron detection20189,852,878Surface processing apparatus20179,728,374'Inspection apparatus'20179,601,302'Inspection apparatus'20179,406,480'Testing apparatus using charged particles and device manufacturing method using the testing apparatus'20169,368,314'Inspection system by charged particle beam and method of manufacturing devices using the system'20169,368,322'Inspection apparatus'20169,194,826'Electron beam apparatus and sample observation method using the same'20159,134,261'Inspection apparatus'20159,105,444'Electro-optical inspection apparatus and method with dust or particle collection function'20159,074,994'Inspection method and apparatus of a glass substrate for imprint'20158,946,631'Testing apparatus using charged particles and device manufacturing method using the testing apparatus'20158,946,629'Inspection apparatus'20158,937,283'Specimen observation method and device using secondary emission electron and mirror electron detection'20158,884,225'Sample observing device and sample observing method'20148,859,984'Method and apparatus for inspecting sample surface'20148,822,919'Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former'20148,803,103'Inspection system by charged particle beam and method of manufacturing devices using the system'20148,796,621'Detector and inspecting apparatus'20148,742,341'Testing apparatus using charged particles and device manufacturing method using the testing apparatus'20148,742,344'Inspection apparatus'20148,674,317'Sample surface inspection apparatus and method'20148,624,182'Electro-optical inspection apparatus and method with dust or particle collection function'20148,525,127'Method and apparatus for inspecting sample surface'20138,497,476'Inspection device'20138,431,892'Detector and inspecting apparatus'20138,368,031'Inspection system by charged particle beam and method of manufacturing devices using the system'20138,368,018'Method and apparatus for charged particle beam inspection'20138,274,047'Substrate surface inspection method and inspection apparatus'20128,124,933'Mapping-projection-type electron beam apparatus for inspecting sample by using electrons emitted from the sample'20128,076,654'Sample surface inspection apparatus and method'20118,053,726'Inspection system by charged particle beam and method of manufacturing devices using the system'20118,013,315'Charged particle beam apparatus, method of adjusting astigmatism using same and method of manufacturing device using same'20117,952,071'Apparatus and method for inspecting sample surface'20117,928,382'Detector and inspecting apparatus'20117,928,378'Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former'20117,888,642'Electron beam apparatus and method of manufacturing semiconductor device using the apparatus'20117,863,580'Electron beam apparatus and an aberration correction optical apparatus'20117,829,853'Sample surface observation method'20107,741,601'Testing apparatus using charged particles and device manufacturing method using the testing apparatus'20107,592,586'Mapping-projection-type electron beam apparatus for inspecting sample by using electrons reflected from the sample'20097,569,838'Electron beam inspection system and inspection method and method of manufacturing devices using the system'20097,521,692'TDI detecting device, a feed-through equipment, an electron beam apparatus using these device and equipment, and a semiconductor device manufacturing method using the same electron beam apparatus'20097,449,691'Detecting apparatus and device manufacturing method'20087,423,267'Electron beam apparatus and method of manufacturing semiconductor device using the apparatus'20087,411,191'Inspection system by charged particle beam and method of manufacturing devices using the system'20087,408,175'Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former'20087,391,036'Sample surface inspection apparatus and method'20087,365,324'Testing apparatus using charged particles and device manufacturing method using the testing apparatus'20087,351,969'Electron beam inspection system and inspection method and method of manufacturing devices using the system'20087,285,010'TDI detecting device, a feed-through equipment and electron beam apparatus using these devices'20077,241,993'Inspection system by charged particle beam and method of manufacturing devices using the system'20077,223,973'Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former'20077,220,604'Method and apparatus for repairing shape, and method for manufacturing semiconductor device using those'20077,176,459'Electron beam apparatus'20077,138,629'Testing apparatus using charged particles and device manufacturing method using the testing apparatus'20067,129,485'Electron beam apparatus and method of manufacturing semiconductor device using the apparatus'20067,115,354'Microfabrication of pattern imprinting'20067,109,483'Method for inspecting substrate, substrate inspecting system and electron beam apparatus'20067,098,457'Electron beam apparatus and device manufacturing method using same'20067,095,022'Electron beam apparatus and method of manufacturing semiconductor device using the apparatus'20067,075,072'Detecting apparatus and device manufacturing method'20066,992,290'Electron beam inspection system and inspection method and method of manufacturing devices using the system'20066,949,735'Beam source'20056,909,092'Electron beam apparatus and device manufacturing method using same'20056,855,929'Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former'20056,671,034'Microfabrication of pattern imprinting'20036,627,095'Magnetic recording disk and method of manufacturing same'20036,468,598'Magnetic disk and method of making thereof'20026,194,048'Magnetic recording disk'20016,099,698'Magnetic disc and method of manufacturing same'20006,048,671'Ultra-fine microfabrication method using an energy beam'20006,015,976'Fabrication apparatus employing energy beam'20006,010,831'Ultra-fine microfabrication method using an energy beam'20006,007,969'Ultra-fine microfabrication method using an energy beam'19995,998,097'Fabrication method employing energy beam source'19995,989,779'Fabrication method employing and energy beam source'19995,894,058'Ultra-fine microfabrication method using a fast atomic energy beam'19995,883,470'Fast atomic beam source with an inductively coupled plasma generator'19995,868,952'Fabrication method with energy beam'19995,852,298'Micro-processing apparatus and method therefor'19985,770,123'Method and apparatus for energy beam machining'19985,708,267'Processing method using fast atom beam'19985,677,011'Processing method using fast atom beam'19975,640,009'Fast atom beam source'19975,563,416'Processing apparatus using fast atom beam'19965,543,615'Beam charge exchanging apparatus'19965,519,213'Fast atom beam source'19965,216,241'Fast atom beam source'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–2020Patents assigned to EBARA CORP (87)· patent assignee history
1993–2016Based in Kanagawa, JP· patent location history
1997–2016Based in Fujisawa, JP· patent location history
1998–2003Patents assigned to HATAMURA YOTARO (11)· patent assignee history
2005–2014Patents assigned to TOSHIBA KK (18)· patent assignee history
2005–2020Based in Tokyo, JP· patent location history
2011–2015Patents assigned to HATAKEYAMA MASAHIRO (16)· patent assignee history
2011–2015Patents assigned to MURAKAMI TAKESHI (10)· patent assignee history
2013–2015Based in Saitama-shi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| EBARA CORP | 87 | 1993–2020 |
| TOSHIBA KK | 18 | 2005–2014 |
| HATAKEYAMA MASAHIROself | 16 | 2011–2015 |
| HATAMURA YOTARO | 11 | 1998–2003 |
| MURAKAMI TAKESHI | 10 | 2011–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 37 | 1993–2016 |
| Tokyo, JP | 28 | 2005–2020 |
| Fujisawa, JP | 25 | 1997–2016 |
| Saitama-shi, JP | 3 | 2013–2015 |