Inventor
Tadayoshi Nakatsuka
Inventor
Osaka, JP
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H03Kprimary
H03KPulse technique34%
H10DInorganic electric semiconductor devices12%
H01PWaveguides7%
H03GControl of amplification7%
H04BTransmission7%
H03DDemodulation or transference of modulation from one carrier to another5%
H03FAmplifiers5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
B82YSpecific uses or applications of nanostructures2%
H03HImpedance networks, e.g. resonant circuits2%
PatentTitleYear
8,193,091'Resin encapsulated semiconductor device and method for manufacturing the same'20127,636,004'High-frequency switching device and semiconductor'20097,541,860'Current control circuit used for voltage booster circuit'20097,492,238'Radio-frequency switching circuit and semiconductor device'20097,423,499'High-frequency switching apparatus'20087,391,282'Radio-frequency switch circuit and semiconductor device'20087,337,547'High frequency switching circuit device'20087,286,001'High-frequency switching device and semiconductor device'20077,265,604'High-frequency switch circuit arrangement'20077,221,207'Semiconductor switching circuit for switching the paths of a high frequency signal in a mobile communications unit'20077,199,635'High-frequency switching device and semiconductor'20077,173,471'High frequency switching circuit and semiconductor device'20077,161,197'RF switching circuit for use in mobile communication systems'20077,138,846'Field effect transistor switch circuit'20067,106,121'High frequency switch circuit'20067,020,453'High-frequency switch circuit and mobile telecommunications terminal device using the same'20067,012,285'Semiconductor device'20066,653,697'High frequency switch circuit and communications terminal using the same'20035,925,903'Field-effect transistors and method of manufacturing the same'19995,752,182'Hybrid IC'19985,689,207'Front-end circuit'19975,514,883'Field effect transistor'19965,461,265'High-frequency variable impedance circuit having improved linearity of operating characteristics'19955,339,458'Frequency converter unit for use in a high-frequency receiver'19945,319,318'Gain control circuit and semiconductor device'19945,210,504'Semiconductor device for TV tuner and TV tuner using the same'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–2008Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (22)· patent assignee history
1993–2009Based in Osaka, JP· patent location history
1997–2008Based in Toyonaka, JP· patent location history
2006Based in Hellerup, DK· patent location history
2007–2009Based in Callisensvej, DK· patent location history
2009–2012Patents assigned to PANASONIC CORP (4)· patent assignee history
2012Patents assigned to FUKUDA TOSHIYUKI (1)· patent assignee history
2012Patents assigned to KAWAI FUMIHIKO (1)· patent assignee history
2012Patents assigned to MINAMIO MASANORI (1)· patent assignee history
2012Based in Suita, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MATSUSHITA ELECTRIC INDUSTRIAL CO LTD | 22 | 1993–2008 |
| PANASONIC CORP | 4 | 2009–2012 |
| FUKUDA TOSHIYUKI | 1 | 2012 |
| KAWAI FUMIHIKO | 1 | 2012 |
| MINAMIO MASANORI | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Osaka, JP | 11 | 1993–2009 |
| Toyonaka, JP | 9 | 1997–2008 |
| Callisensvej, DK | 4 | 2007–2009 |
| Suita, JP | 1 | 2012 |
| Hellerup, DK | 1 | 2006 |