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Inventor

Wade J. Hodge

Inventor
Bolton, VT, US

Overview

7→
Patents
2002–2014
Patent span
Electricity
Primary field (CPC H)

Patents· 7 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices36%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1036%
C23CCoating metallic material21%
H01LSemiconductor devices7%
PatentTitleYear
8,853,043'Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)'20148,299,500'Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region'20127,413,967'Yield improvement in silicon-germanium epitaxial growth'20087,118,995'Yield improvement in silicon-germanium epitaxial growth'20066,887,797'Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer'20056,436,196'Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer'20026,346,487'Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2014Patents assigned to IBM (7)· patent assignee history
2002–2014Based in Bolton, VT, US· patent location history
2008Based in Georgia, VT, US· patent location history
2012–2014Patents assigned to HODGE WADE J (2)· patent assignee history
2012–2014Patents assigned to JOSEPH ALVIN J (2)· patent assignee history
2012–2014Patents assigned to KRISHNASAMY RAJENDRAN (2)· patent assignee history
2012–2014Patents assigned to LIU QIZHI (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IBM72002–2014
HODGE WADE Jself22012–2014
JOSEPH ALVIN J22012–2014
KRISHNASAMY RAJENDRAN22012–2014
LIU QIZHI22012–2014
Locations
LocationPatentsSpan
Bolton, VT, US62002–2014
Georgia, VT, US12008