Inventor

Josef Boeck

Inventor
Munich, DE

Overview

20→
Patents
2003–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 20 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1027%
H01LSemiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10DInorganic electric semiconductor devices13%
H01QAntennas, i.e. radio aerials10%
G01SRadio direction-finding6%
H04BTransmission4%
H05KPrinted circuits4%
H01PWaveguides2%
PatentTitleYear
9,922,946'Method of manufacturing a semiconductor package having a semiconductor chip and a microwave component'20189,910,145'Wireless communication system, a radar system and a method for determining a position information of an object'20189,871,125'Bipolar transistor'20189,761,701'Bipolar transistor'20179,653,426'Method of manufacturing a semiconductor package having an integrated microwave component'20179,627,516'Bipolar transistor'20179,583,811'Transition between a plastic waveguide and a semiconductor chip, where the semiconductor chip is embedded and encapsulated within a mold compound'20179,337,159'Semiconductor package with integrated microwave component'20169,263,362'Method of forming a ring-shaped metal structure'20169,064,787'Integrated antennas in wafer level package'20158,878,335'Method and system for providing fusing after packaging of semiconductor devices'20148,451,618'Integrated antennas in wafer level package'20138,329,532'Process for the simultaneous deposition of crystalline and amorphous layers with doping'20128,125,072'Device including a ring-shaped metal structure and method'20128,115,274'Fuse structure and method for manufacturing same'20128,067,290'Bipolar transistor with base-collector-isolation without dielectric'20117,989,919'Capacitor arrangement and method for making same'20117,005,337'Method for a parallel production of an MOS transistor and a bipolar transistor'20066,770,953'Bipolar transistor'20046,642,606'Method for producing siliconized polysilicon contacts in integrated semiconductor structures'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2018Patents assigned to INFINEON TECHNOLOGIES AG (19)· patent assignee history
2003–2016Based in Munich, DE· patent location history
2011–2016Patents assigned to BOECK JOSEF (7)· patent assignee history
2011–2014Patents assigned to SCHAEFER HERBERT (4)· patent assignee history
2012–2016Patents assigned to LACHNER RUDOLF (4)· patent assignee history
2012–2016Patents assigned to KNAPP HERBERT (3)· patent assignee history
2016–2018Based in Putzbrunn, DE· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INFINEON TECHNOLOGIES AG192003–2018
BOECK JOSEFself72011–2016
LACHNER RUDOLF42012–2016
SCHAEFER HERBERT42011–2014
KNAPP HERBERT32012–2016
Locations
LocationPatentsSpan
Munich, DE122003–2016
Putzbrunn, DE82016–2018