Inventor
Masami Kouketsu
Inventor
Hachioji, JP
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests33%
PatentTitleYear
7,790,554'Method of manufacturing semiconductor integrated circuit device with high and low breakdown-voltage MISFETs'20107,541,661'Semiconductor integrated circuit device with high and low breakdown-voltage MISFETs'20097,224,037'Semiconductor integrated circuit device with high and low breakdown-voltage MISFETs'20076,780,717'Semiconductor integrated circuit device and method of manufacturing the same'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2010Patents assigned to RENESAS TECH CORP (4)· patent assignee history
2004Patents assigned to HITACHI DEVICE ENG (1)· patent assignee history
2004–2010Based in Hachioji, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RENESAS TECH CORP | 4 | 2004–2010 |
| HITACHI DEVICE ENG | 1 | 2004 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hachioji, JP | 4 | 2004–2010 |