Inventor
Nozomu Matsuzaki
Inventor
Kokubunji, JP
Overview
Patents· 66 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices27%
G11CStatic stores26%
H10DInorganic electric semiconductor devices21%
H10NElectric solid-state devices not otherwise provided for10%
H01LSemiconductor devices7%
B82YSpecific uses or applications of nanostructures3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
H03KPulse technique1%
H04LTransmission of digital information, e.g. telegraphic communication1%
PatentTitleYear
10,354,735Semiconductor device201910,115,469Semiconductor device20189,812,211'Semiconductor device'20179,412,750'Fabrication method and structure of semiconductor non-volatile memory device'20169,412,459'Semiconductor device'20169,299,715'Fabrication method and structure of semiconductor non-volatile memory device'20169,208,828'Semiconductor device and its manufacturing method'20159,111,909'Method of forming a CMOS structure having gate insulation films of different thicknesses'20159,012,968'Semiconductor non-volatile memory device'20158,890,107'Semiconductor memory'20148,866,120'Semiconductor memory'20148,859,344'Semiconductor memory'20148,737,116'Semiconductor device and its manufacturing method'20148,698,224'Semiconductor device'20148,674,419'Method of forming a CMOS structure having gate insulation films of different thicknesses'20148,618,523'Semiconductor device'20138,546,783'Semiconductor device and method of manufacturing the same'20138,482,961'Semiconductor device and its manufacturing method'20138,426,904'Semiconductor device'20138,319,204'Semiconductor device'20128,232,543'Semiconductor device and method of manufacturing the same'20128,179,739'Semiconductor device and its manufacturing method'20128,084,810'Fabrication method and structure of semiconductor non-volatile memory device'20118,054,680'Semiconductor device'20118,017,986'Semiconductor device'20118,000,126'Semiconductor device with recording layer containing indium, germanium, antimony and tellurium'20117,955,872'Manufacturing method of semiconductor integrated circuit device using magnetic memory'20117,884,348'Semiconductor device and method of manufacturing the same'20117,864,568'Semiconductor storage device'20117,796,426'Semiconductor device'20107,781,814'Method of forming a CMOS structure having gate insulation films of different thicknesses'20107,778,069'Semiconductor device and its fabrication method'20107,714,314'Semiconductor device and method of manufacturing the same'20107,700,992'Semiconductor device'20107,692,234'Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device'20107,671,404'Fabrication method and structure of semiconductor non-volatile memory device'20107,667,218'Semiconductor integrated circuit device and method of manufacturing the same'20107,528,036'Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device'20097,427,791'Method of forming a CMOS structure having gate insulation films of different thicknesses'20087,414,283'Semiconductor device'20087,385,838'Semiconductor device with a non-erasable memory and/or a nonvolatile memory'20087,304,345'Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device'20077,206,216'Semiconductor device with a non-erasable memory and/or a nonvolatile memory'20077,195,976'Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device'20077,180,793'Semiconductor non-volatile storage device'20077,141,475'Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device'20067,132,718'Fabrication method and structure of semiconductor non-volatile memory device'20067,130,223'Nonvolatile semiconductor memory device'20067,057,230'Nonvolatile semiconductor memory device employing transistors having different gate withstand voltages for enhanced reading speed'20066,972,997'Nonvolatile semiconductor memory device'20056,944,056'Semiconductor non-volatile storage device'20056,862,220'Semiconductor device'20056,842,376'Non-volatile semiconductor memory device for selectively re-checking word lines'20056,833,582'Nonvolatile semiconductor memory device'20046,785,165'Semiconductor device'20046,711,061'Non-volatile semiconductor memory device for selectively re-checking word lines'20046,657,248'Semiconductor device having groove isolation structure and gate oxide films with different thickness'20036,617,632'Semiconductor device and a method of manufacturing the same'20036,500,715'Method of forming a CMOS structure having gate insulation films of different thicknesses'20026,461,916'Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making the device'20026,459,619'Non-volatile semiconductor memory device for selectively re-checking word lines'20026,444,554'Method of making a non-volatile memory and semiconductor device'20026,307,236'Semiconductor integrated circuit device'20015,680,066'Signal transition detector circuit'19975,619,151'Semiconductor device'19975,091,883'Semiconductor memory and microprocessor'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992–2011Patents assigned to HITACHI LTD (12)· patent assignee history
1992–1997Based in Hitachi, JP· patent location history
2001–2019Based in Kokubunji, JP· patent location history
2002–2014Patents assigned to HITACHI ULSI SYS CO LTD (9)· patent assignee history
2004–2010Patents assigned to RENESAS TECH CORP (25)· patent assignee history
2010–2015Based in Kodaira, JP· patent location history
2010–2013Based in Tokyo, JP· patent location history
2011–2019Patents assigned to RENESAS ELECTRONICS CORP (28)· patent assignee history
2011–2014Patents assigned to MATSUZAKI NOZOMU (12)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RENESAS ELECTRONICS CORP | 28 | 2011–2019 |
| RENESAS TECH CORP | 25 | 2004–2010 |
| HITACHI LTD | 12 | 1992–2011 |
| MATSUZAKI NOZOMUself | 12 | 2011–2014 |
| HITACHI ULSI SYS CO LTD | 9 | 2002–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kokubunji, JP | 48 | 2001–2019 |
| Kodaira, JP | 11 | 2010–2015 |
| Tokyo, JP | 4 | 2010–2013 |
| Hitachi, JP | 3 | 1992–1997 |